Enhancing charge extraction in BiVO4 photoanodes by ZrCl4 treatment of SnO2 hole-blocking layers

In the search for more efficient and sustainable photoelectrochemical devices, BiVO4 is nowadays one of the best-performing photoanode material, with favourable band structure for water oxidation. However, BiVO4 photoanodes face challenges such as poor charge transport and slow kinetics. To address...

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Autores: Gacha Mendoza, Valentina, Ros Figueras, Carles, García de Andrés, Xènia|||0000-0003-0795-4168, Llorca, Jordi, Martorell Pena, Jordi|||0000-0002-8762-1162, Raptis, Dimitrios
Tipo de documento: artigo
Data de publicação:2024
País:España
Recursos:Universitat Politècnica de Catalunya (UPC)
Repositório:UPCommons. Portal del coneixement obert de la UPC
Idioma:inglês
OAI Identifier:oai:upcommons.upc.edu:2117/415915
Acesso em linha:https://hdl.handle.net/2117/415915
https://dx.doi.org/10.1016/j.apmt.2024.102415
Access Level:Acceso aberto
Palavra-chave:BiVO4 Photoanodes
SnO2
ZrCl4
Metal oxidation treatment
Water splitting
Àrees temàtiques de la UPC::Enginyeria química::Química física::Electroquímica
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spelling Enhancing charge extraction in BiVO4 photoanodes by ZrCl4 treatment of SnO2 hole-blocking layersGacha Mendoza, ValentinaRos Figueras, CarlesGarcía de Andrés, Xènia|||0000-0003-0795-4168Llorca, JordiMartorell Pena, Jordi|||0000-0002-8762-1162Raptis, DimitriosBiVO4 PhotoanodesSnO2ZrCl4Metal oxidation treatmentWater splittingÀrees temàtiques de la UPC::Enginyeria química::Química física::ElectroquímicaIn the search for more efficient and sustainable photoelectrochemical devices, BiVO4 is nowadays one of the best-performing photoanode material, with favourable band structure for water oxidation. However, BiVO4 photoanodes face challenges such as poor charge transport and slow kinetics. To address these issues, SnO2 films are commonly used as hole blocking layers, reducing recombination rate and enhancing charge lifespan and overall productivity. Yet, this method encounters problems like high defect concentrations at the SnO2/BiVO4 interface and pinholes in the SnO2 layer, which lead to charge recombination. In this study, we explore a ZrCl4 treatment to improve the effectiveness of SnO2 as a hole-blocking layer in BiVO4 photoanodes. Our findings, supported by detailed optoelectronic characterization and continuous and modulated electrochemical analysis, reveal that ZrCl4 treatment significantly enhances the hole-blocking properties of SnO2. This treatment results in a 37 % increase in photocurrent density at 1.23 VRHE and a 40 mV shift in the onset voltage, demonstrating a substantial improvement in overall photoanode efficiency.Peer ReviewedElsevier20242024-09-0120242024-10-15journal articlehttp://purl.org/coar/resource_type/c_6501VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/2117/415915https://dx.doi.org/10.1016/j.apmt.2024.102415reponame:UPCommons. Portal del coneixement obert de la UPCinstname:Universitat Politècnica de Catalunya (UPC)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2Attribution-NonCommercial-NoDerivatives 4.0 Internationalhttp://creativecommons.org/licenses/by-nc-nd/4.0/info:eu-repo/semantics/openAccessoai:upcommons.upc.edu:2117/4159152026-05-27T15:37:01Z
dc.title.none.fl_str_mv Enhancing charge extraction in BiVO4 photoanodes by ZrCl4 treatment of SnO2 hole-blocking layers
title Enhancing charge extraction in BiVO4 photoanodes by ZrCl4 treatment of SnO2 hole-blocking layers
spellingShingle Enhancing charge extraction in BiVO4 photoanodes by ZrCl4 treatment of SnO2 hole-blocking layers
Gacha Mendoza, Valentina
BiVO4 Photoanodes
SnO2
ZrCl4
Metal oxidation treatment
Water splitting
Àrees temàtiques de la UPC::Enginyeria química::Química física::Electroquímica
title_short Enhancing charge extraction in BiVO4 photoanodes by ZrCl4 treatment of SnO2 hole-blocking layers
title_full Enhancing charge extraction in BiVO4 photoanodes by ZrCl4 treatment of SnO2 hole-blocking layers
title_fullStr Enhancing charge extraction in BiVO4 photoanodes by ZrCl4 treatment of SnO2 hole-blocking layers
title_full_unstemmed Enhancing charge extraction in BiVO4 photoanodes by ZrCl4 treatment of SnO2 hole-blocking layers
title_sort Enhancing charge extraction in BiVO4 photoanodes by ZrCl4 treatment of SnO2 hole-blocking layers
dc.creator.none.fl_str_mv Gacha Mendoza, Valentina
Ros Figueras, Carles
García de Andrés, Xènia|||0000-0003-0795-4168
Llorca, Jordi
Martorell Pena, Jordi|||0000-0002-8762-1162
Raptis, Dimitrios
author Gacha Mendoza, Valentina
author_facet Gacha Mendoza, Valentina
Ros Figueras, Carles
García de Andrés, Xènia|||0000-0003-0795-4168
Llorca, Jordi
Martorell Pena, Jordi|||0000-0002-8762-1162
Raptis, Dimitrios
author_role author
author2 Ros Figueras, Carles
García de Andrés, Xènia|||0000-0003-0795-4168
Llorca, Jordi
Martorell Pena, Jordi|||0000-0002-8762-1162
Raptis, Dimitrios
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv BiVO4 Photoanodes
SnO2
ZrCl4
Metal oxidation treatment
Water splitting
Àrees temàtiques de la UPC::Enginyeria química::Química física::Electroquímica
topic BiVO4 Photoanodes
SnO2
ZrCl4
Metal oxidation treatment
Water splitting
Àrees temàtiques de la UPC::Enginyeria química::Química física::Electroquímica
description In the search for more efficient and sustainable photoelectrochemical devices, BiVO4 is nowadays one of the best-performing photoanode material, with favourable band structure for water oxidation. However, BiVO4 photoanodes face challenges such as poor charge transport and slow kinetics. To address these issues, SnO2 films are commonly used as hole blocking layers, reducing recombination rate and enhancing charge lifespan and overall productivity. Yet, this method encounters problems like high defect concentrations at the SnO2/BiVO4 interface and pinholes in the SnO2 layer, which lead to charge recombination. In this study, we explore a ZrCl4 treatment to improve the effectiveness of SnO2 as a hole-blocking layer in BiVO4 photoanodes. Our findings, supported by detailed optoelectronic characterization and continuous and modulated electrochemical analysis, reveal that ZrCl4 treatment significantly enhances the hole-blocking properties of SnO2. This treatment results in a 37 % increase in photocurrent density at 1.23 VRHE and a 40 mV shift in the onset voltage, demonstrating a substantial improvement in overall photoanode efficiency.
publishDate 2024
dc.date.none.fl_str_mv 2024
2024-09-01
2024
2024-10-15
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/2117/415915
https://dx.doi.org/10.1016/j.apmt.2024.102415
url https://hdl.handle.net/2117/415915
https://dx.doi.org/10.1016/j.apmt.2024.102415
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
Attribution-NonCommercial-NoDerivatives 4.0 International
http://creativecommons.org/licenses/by-nc-nd/4.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
Attribution-NonCommercial-NoDerivatives 4.0 International
http://creativecommons.org/licenses/by-nc-nd/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:UPCommons. Portal del coneixement obert de la UPC
instname:Universitat Politècnica de Catalunya (UPC)
instname_str Universitat Politècnica de Catalunya (UPC)
reponame_str UPCommons. Portal del coneixement obert de la UPC
collection UPCommons. Portal del coneixement obert de la UPC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,811543

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