Microstructure of highly oriented, hexagonal, boron nitride thin films grown on crystalline silicon by radio frequency plasma-assisted chemical vapor deposition

We present a high‐resolution electron microscopy study of the microstructure of boron nitride thin films grown on silicon (100) by radio‐frequency plasma‐assisted chemical vapor deposition using B2H6 (1% in H2) and NH3 gases. Well‐adhered boron nitride films grown on the grounded electrode show a hi...

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Detalles Bibliográficos
Autores: Andújar Bella, José Luis, Bertrán Serra, Enric, Manniete, Y.
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:1996
País:España
Institución:Universidad de Barcelona
Repositorio:Dipòsit Digital de la UB
OAI Identifier:oai:diposit.ub.edu:2445/32239
Acceso en línea:https://hdl.handle.net/2445/32239
Access Level:acceso abierto
Palabra clave:Superfícies (Tecnologia)
Pel·lícules fines
Materials nanoestructurats
Nitrur de bor
Surfaces (Technology
Thin films
Nanostructured materials
Boron nitride
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spelling Microstructure of highly oriented, hexagonal, boron nitride thin films grown on crystalline silicon by radio frequency plasma-assisted chemical vapor depositionAndújar Bella, José LuisBertrán Serra, EnricManniete, Y.Superfícies (Tecnologia)Pel·lícules finesMaterials nanoestructuratsNitrur de borSurfaces (TechnologyThin filmsNanostructured materialsBoron nitrideWe present a high‐resolution electron microscopy study of the microstructure of boron nitride thin films grown on silicon (100) by radio‐frequency plasma‐assisted chemical vapor deposition using B2H6 (1% in H2) and NH3 gases. Well‐adhered boron nitride films grown on the grounded electrode show a highly oriented hexagonal structure with the c‐axis parallel to the substrate surface throughout the film, without any interfacial amorphous layer. We ascribed this textured growth to an etching effect of atomic hydrogen present in the gas discharge. In contrast, films grown on the powered electrode, with compressive stress induced by ion bombardment, show a multilayered structure as observed by other authors, composed of an amorphous layer, a hexagonal layer with the c‐axis parallel to the substrate surface and another layer oriented at randomAmerican Institute of Physics1996info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttps://hdl.handle.net/2445/32239Articles publicats en revistes (Física Aplicada)reponame:Dipòsit Digital de la UBinstname:Universidad de BarcelonaInglésReproducció del document publicat a: http://dx.doi.org/10.1063/1.363677Journal of Applied Physics, 1996, vol. 80, num. 10, p. 6553-6555http://dx.doi.org/10.1063/1.363677(c) American Institute of Physics , 1996info:eu-repo/semantics/openAccessoai:diposit.ub.edu:2445/322392026-05-27T06:46:51Z
dc.title.none.fl_str_mv Microstructure of highly oriented, hexagonal, boron nitride thin films grown on crystalline silicon by radio frequency plasma-assisted chemical vapor deposition
title Microstructure of highly oriented, hexagonal, boron nitride thin films grown on crystalline silicon by radio frequency plasma-assisted chemical vapor deposition
spellingShingle Microstructure of highly oriented, hexagonal, boron nitride thin films grown on crystalline silicon by radio frequency plasma-assisted chemical vapor deposition
Andújar Bella, José Luis
Superfícies (Tecnologia)
Pel·lícules fines
Materials nanoestructurats
Nitrur de bor
Surfaces (Technology
Thin films
Nanostructured materials
Boron nitride
title_short Microstructure of highly oriented, hexagonal, boron nitride thin films grown on crystalline silicon by radio frequency plasma-assisted chemical vapor deposition
title_full Microstructure of highly oriented, hexagonal, boron nitride thin films grown on crystalline silicon by radio frequency plasma-assisted chemical vapor deposition
title_fullStr Microstructure of highly oriented, hexagonal, boron nitride thin films grown on crystalline silicon by radio frequency plasma-assisted chemical vapor deposition
title_full_unstemmed Microstructure of highly oriented, hexagonal, boron nitride thin films grown on crystalline silicon by radio frequency plasma-assisted chemical vapor deposition
title_sort Microstructure of highly oriented, hexagonal, boron nitride thin films grown on crystalline silicon by radio frequency plasma-assisted chemical vapor deposition
dc.creator.none.fl_str_mv Andújar Bella, José Luis
Bertrán Serra, Enric
Manniete, Y.
author Andújar Bella, José Luis
author_facet Andújar Bella, José Luis
Bertrán Serra, Enric
Manniete, Y.
author_role author
author2 Bertrán Serra, Enric
Manniete, Y.
author2_role author
author
dc.subject.none.fl_str_mv Superfícies (Tecnologia)
Pel·lícules fines
Materials nanoestructurats
Nitrur de bor
Surfaces (Technology
Thin films
Nanostructured materials
Boron nitride
topic Superfícies (Tecnologia)
Pel·lícules fines
Materials nanoestructurats
Nitrur de bor
Surfaces (Technology
Thin films
Nanostructured materials
Boron nitride
description We present a high‐resolution electron microscopy study of the microstructure of boron nitride thin films grown on silicon (100) by radio‐frequency plasma‐assisted chemical vapor deposition using B2H6 (1% in H2) and NH3 gases. Well‐adhered boron nitride films grown on the grounded electrode show a highly oriented hexagonal structure with the c‐axis parallel to the substrate surface throughout the film, without any interfacial amorphous layer. We ascribed this textured growth to an etching effect of atomic hydrogen present in the gas discharge. In contrast, films grown on the powered electrode, with compressive stress induced by ion bombardment, show a multilayered structure as observed by other authors, composed of an amorphous layer, a hexagonal layer with the c‐axis parallel to the substrate surface and another layer oriented at random
publishDate 1996
dc.date.none.fl_str_mv 1996
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/32239
url https://hdl.handle.net/2445/32239
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Reproducció del document publicat a: http://dx.doi.org/10.1063/1.363677
Journal of Applied Physics, 1996, vol. 80, num. 10, p. 6553-6555
http://dx.doi.org/10.1063/1.363677
dc.rights.none.fl_str_mv (c) American Institute of Physics , 1996
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) American Institute of Physics , 1996
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv Articles publicats en revistes (Física Aplicada)
reponame:Dipòsit Digital de la UB
instname:Universidad de Barcelona
instname_str Universidad de Barcelona
reponame_str Dipòsit Digital de la UB
collection Dipòsit Digital de la UB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,300724

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