Silicon surface nanostructuration with symmetric cathode configurations for photonic devices
The physical properties of porous silicon (PSi) can be adjusted to provide a better performance in optoelectronic devices. A controlled method commonly used to fabricate PSi is the anodization process, which employs platinum as a conventional cathode. Herein, we investigate the effect of replacing t...
| Autores: | , , |
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| Tipo de documento: | artigo |
| Data de publicação: | 2024 |
| País: | España |
| Recursos: | Universidad Autónoma de Madrid |
| Repositório: | Biblos-e Archivo. Repositorio Institucional de la UAM |
| Idioma: | inglês |
| OAI Identifier: | oai:repositorio.uam.es:10486/717076 |
| Acesso em linha: | http://hdl.handle.net/10486/717076 https://dx.doi.org/10.3390/app14198635 |
| Access Level: | Acceso aberto |
| Palavra-chave: | morphology nanostructuring porous silicon symmetric cathode Física |
| Resumo: | The physical properties of porous silicon (PSi) can be adjusted to provide a better performance in optoelectronic devices. A controlled method commonly used to fabricate PSi is the anodization process, which employs platinum as a conventional cathode. Herein, we investigate the effect of replacing the Pt cathode with symmetric heavily doped silicon on the resulting surface structure on silicon substrates. The symmetric configuration is established when both anode and cathode are from the same material. Three different samples were anodized using both configurations and under different fabrication conditions. The results demonstrate the possibility to produce porous silicon structure using the heavily doped Si as alternative to the expensive Pt counter electrode. Furthermore the modified configuration offers the possibility of manufacturing large areas of nanostructured PSi without limitation of the counter electrode area and the applied current density. The formed porous structures using Si cathode have better uniformity, larger pore size, and lower number of interlinked and shallow holes than traditional methods. The porous structures fabricated with this configuration show broadband reduction in spectral reflectivity and changes in the schottky diode dark characteristics when compared with PSi fabricated with Pt conventional electrode |
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