Dielectric screening and plasmons in AA-stacked bilayer graphene
The screening properties and collective excitations (plasmons) in AA-stacked bilayer graphene are studied within the random phase approximation. Whereas long-lived plasmons in single-layer graphene and in AB-stacked bilayer graphene can exist only in doped samples, we find that coherent plasmons can...
| Autores: | , |
|---|---|
| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2013 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/94042 |
| Acceso en línea: | http://hdl.handle.net/10261/94042 |
| Access Level: | acceso abierto |
| id |
ES_2bf71a35aba500cdf3ea5a64ca6c636a |
|---|---|
| oai_identifier_str |
oai:digital.csic.es:10261/94042 |
| network_acronym_str |
ES |
| network_name_str |
España |
| repository_id_str |
|
| spelling |
Dielectric screening and plasmons in AA-stacked bilayer grapheneRoldán, RafaelBrey, LuisThe screening properties and collective excitations (plasmons) in AA-stacked bilayer graphene are studied within the random phase approximation. Whereas long-lived plasmons in single-layer graphene and in AB-stacked bilayer graphene can exist only in doped samples, we find that coherent plasmons can disperse in AA-stacked bilayer graphene even in the absence of doping. Moreover, we show that the characteristic low-energy dispersion relation is unaffected by changes in the number of carriers, unless the chemical potential of the doped sample exceeds the interlayer hopping energy. We further consider the effect of an external electric field applied perpendicular to the layers, and show how the dispersion of the modes can be tuned by the application of a gate voltage. © 2013 American Physical Society.R.R. acknowledges financial support from the Juan de la Cierva Program and from Grant No. FIS2011-23713 (MINECO, Spain). L.B. acknowledges financial support by MINECO-Spain under Grant No. FIS2012-33521.Peer ReviewedAmerican Physical Society2014201420132014info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/94042reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Ingléshttp://dx.doi.org/10.1103/PhysRevB.88.115420info:eu-repo/semantics/openAccessoai:digital.csic.es:10261/940422026-05-22T06:33:51Z |
| dc.title.none.fl_str_mv |
Dielectric screening and plasmons in AA-stacked bilayer graphene |
| title |
Dielectric screening and plasmons in AA-stacked bilayer graphene |
| spellingShingle |
Dielectric screening and plasmons in AA-stacked bilayer graphene Roldán, Rafael |
| title_short |
Dielectric screening and plasmons in AA-stacked bilayer graphene |
| title_full |
Dielectric screening and plasmons in AA-stacked bilayer graphene |
| title_fullStr |
Dielectric screening and plasmons in AA-stacked bilayer graphene |
| title_full_unstemmed |
Dielectric screening and plasmons in AA-stacked bilayer graphene |
| title_sort |
Dielectric screening and plasmons in AA-stacked bilayer graphene |
| dc.creator.none.fl_str_mv |
Roldán, Rafael Brey, Luis |
| author |
Roldán, Rafael |
| author_facet |
Roldán, Rafael Brey, Luis |
| author_role |
author |
| author2 |
Brey, Luis |
| author2_role |
author |
| description |
The screening properties and collective excitations (plasmons) in AA-stacked bilayer graphene are studied within the random phase approximation. Whereas long-lived plasmons in single-layer graphene and in AB-stacked bilayer graphene can exist only in doped samples, we find that coherent plasmons can disperse in AA-stacked bilayer graphene even in the absence of doping. Moreover, we show that the characteristic low-energy dispersion relation is unaffected by changes in the number of carriers, unless the chemical potential of the doped sample exceeds the interlayer hopping energy. We further consider the effect of an external electric field applied perpendicular to the layers, and show how the dispersion of the modes can be tuned by the application of a gate voltage. © 2013 American Physical Society. |
| publishDate |
2013 |
| dc.date.none.fl_str_mv |
2013 2014 2014 2014 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/article http://purl.org/coar/resource_type/c_6501 Publisher's version info:eu-repo/semantics/publishedVersion |
| format |
article |
| status_str |
publishedVersion |
| dc.identifier.none.fl_str_mv |
http://hdl.handle.net/10261/94042 |
| url |
http://hdl.handle.net/10261/94042 |
| dc.language.none.fl_str_mv |
Inglés |
| language_invalid_str_mv |
Inglés |
| dc.relation.none.fl_str_mv |
http://dx.doi.org/10.1103/PhysRevB.88.115420 |
| dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess |
| eu_rights_str_mv |
openAccess |
| dc.publisher.none.fl_str_mv |
American Physical Society |
| publisher.none.fl_str_mv |
American Physical Society |
| dc.source.none.fl_str_mv |
reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC instname:Consejo Superior de Investigaciones Científicas (CSIC) |
| instname_str |
Consejo Superior de Investigaciones Científicas (CSIC) |
| reponame_str |
DIGITAL.CSIC. Repositorio Institucional del CSIC |
| collection |
DIGITAL.CSIC. Repositorio Institucional del CSIC |
| repository.name.fl_str_mv |
|
| repository.mail.fl_str_mv |
|
| _version_ |
1869405196889620480 |
| score |
15,812429 |