Strain-Enhanced Large-Area Monolayer MoS2 Photodetectors

In this study, we show a direct correlation between the applied mechanical strain and an increase in monolayer MoS2 photoresponsivity. This shows that tensile strain can improve the efficiency of monolayer MoS2 photodetectors. The observed high photocurrent and extended response time in our devices...

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Detalles Bibliográficos
Autores: Radatovic, Borna, Çakıroğlu, Onur, Jadrisǩo, V., Frisenda, R., Senkic, A., Vujici, N., Kralj, M., Petrovic, M., Castellanos-Gómez, Andrés
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2024
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/383726
Acceso en línea:http://hdl.handle.net/10261/383726
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85188099402&doi=10.1021%2facsami.4c00458&partnerID=40&md5=586d32311d0014892c4efd0fe273dc0a
Access Level:acceso abierto
Palabra clave:atomic force microscopy
MoS2
photocurrent spectroscopy
photodetector
PL spectroscopy
strain
strain sensor
Descripción
Sumario:In this study, we show a direct correlation between the applied mechanical strain and an increase in monolayer MoS2 photoresponsivity. This shows that tensile strain can improve the efficiency of monolayer MoS2 photodetectors. The observed high photocurrent and extended response time in our devices are indicative that devices are predominantly governed by photogating mechanisms, which become more prominent with applied tensile strain. Furthermore, we have demonstrated that a nonencapsulated MoS2 monolayer can be used in strain-based devices for many cycles and extensive periods of time, showing endurance under ambient conditions without loss of functionality. Such robustness emphasizes the potential of MoS2 for further functionalization and utilization of different flexible sensors. © 2024 The Authors.