Seebeck effects in two-dimensional spin transistors

© 2015 American Physical Society. We consider a spin-orbit-coupled two-dimensional electron system under the influence of a thermal gradient externally applied to two attached reservoirs. We discuss the generated voltage bias (charge Seebeck effect), spin bias (spin Seebeck effect), and magnetizatio...

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Detalles Bibliográficos
Autores: Alomar, María Isabel, Serra, Llorenç, Sánchez, David
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2015
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/132995
Acceso en línea:http://hdl.handle.net/10261/132995
Access Level:acceso abierto
Descripción
Sumario:© 2015 American Physical Society. We consider a spin-orbit-coupled two-dimensional electron system under the influence of a thermal gradient externally applied to two attached reservoirs. We discuss the generated voltage bias (charge Seebeck effect), spin bias (spin Seebeck effect), and magnetization-dependent thermopower (magneto-Seebeck effect) in the ballistic regime of transport at linear response. We find that the charge thermopower is an oscillating function of both the spin-orbit strength and the quantum well width. We also observe that it is always negative for normal leads. We carefully compare the exact results for the linear response coefficients and a Sommerfeld approximation. When the contacts are ferromagnetic, we calculate the spin-resolved Seebeck coefficient for parallel and antiparallel magnetization configuration. Remarkably, the thermopower can change its sign by tuning the Fermi energy. This effect disappears when the Rashba coupling is absent. Additionally, we determine the magneto-Seebeck ratio, which shows dramatic changes in the presence of a the Rashba potential.