Additive engineering for stable halide perovskite solar cells
Halide perovskite solar cells (PSCs) have already demonstrated power conversion efficiencies above 25%, which makes them one of the most attractive photovoltaic technologies. However, one of the main bottlenecks towards their commercialization is their long-term stability, which should exceed the 20...
| Autores: | , , |
|---|---|
| Tipo de recurso: | artículo |
| Fecha de publicación: | 2021 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:239285 |
| Acceso en línea: | https://ddd.uab.cat/record/239285 https://dx.doi.org/urn:doi:10.1016/j.jechem.2021.01.037 |
| Access Level: | acceso abierto |
| Palabra clave: | Additives Additive engineering Perovskite solar cells Defect passivation Shallow defect Deep defect Stability |
| Sumario: | Halide perovskite solar cells (PSCs) have already demonstrated power conversion efficiencies above 25%, which makes them one of the most attractive photovoltaic technologies. However, one of the main bottlenecks towards their commercialization is their long-term stability, which should exceed the 20-year mark. Additive engineering is an effective pathway for the enhancement of device lifetime. Additives applied as organic or inorganic compounds, improve crystal grain growth enhancing power conversion efficiency. The interaction of their functional groups with the halide perovskite (HP) absorber, as well as with the transport layers, results in defect passivation and ion immobilization improving device performance and stability. In this review, we briefly summarize the different types of additives recently applied in PSC to enhance not only efficiency but also long-term stability. We discuss the different mechanism behind additive engineering and the role of the functional groups of these additives for defect passivation. Special emphasis is given to their effect on the stability of PSCs under environmental conditions such as humidity, atmosphere, light irradiation (UV, visible) or heat, taking into account the recently reported ISOS protocols. We also discuss the relation between deep-defect passivation, non-radiative recombination and device efficiency, as well as the possible relation between shallow-defect passivation, ion immobilization and device operational stability. Finally, insights into the challenge and criteria for additive selection are provided for the further stability enhancement of PSCs. |
|---|