Large Magnetoresistance in Fe/MgO/FeCo(001) Epitaxial Tunnel-Junctions on GaAs(001).

We present tunneling experiments on Fe~001!/MgO~20 Å!/FeCo~001! single-crystal epitaxial junctions of high quality grown by sputtering and laser ablation. Tunnel magnetoresistance measurements give 60% at 30 K, to be compared with 13% obtained recently on ~001!-oriented Fe/amorphous-Al2O3 /FeCo tunn...

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Detalles Bibliográficos
Autores: Bowen, M., Cros, V., Petroff, F., Fert, Albert, 1938-, Martínez Boubeta, José Carlos, Costa Krämer, José Luis, Anguita, José Virgilio, Cebollada, Alfonso, Briones Fernández-Pola, Fernando, Teresa, J. M. de, Morellon, L., Ibarra, M. R., Güell Vilà, Frank, Peiró Martínez, Francisca, Cornet i Calveras, Albert
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2001
País:España
Institución:Universidad de Barcelona
Repositorio:Dipòsit Digital de la UB
OAI Identifier:oai:diposit.ub.edu:2445/33761
Acceso en línea:https://hdl.handle.net/2445/33761
Access Level:acceso abierto
Palabra clave:Magnetoresistència
Dispositius de memòria d'ordinador
Microelectrònica
Efecte túnel
Ferro
Magnetoresistance
Computer storage devices
Microelectronics
Tunneling (Physics)
Iron
Descripción
Sumario:We present tunneling experiments on Fe~001!/MgO~20 Å!/FeCo~001! single-crystal epitaxial junctions of high quality grown by sputtering and laser ablation. Tunnel magnetoresistance measurements give 60% at 30 K, to be compared with 13% obtained recently on ~001!-oriented Fe/amorphous-Al2O3 /FeCo tunnel junctions. This difference demonstrates that the spin polarization of tunneling electrons is not directly related to the density of states of the free metal surface Fe~001! in this case but depends on the actual electronic structure of the entire electrode/barrier system.

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