Dedicated random telegraph noise characterization of Ni/HfO2-based RRAM devices

In this work, random telegraph noise (RTN) associated to discrete current fluctuations in the high resistive state of Ni/HfO2-based RRAM devices is investigated. For this purpose, a dedicated software tool has been developed to control the instrumentation and to perform successive and smart RTN meas...

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Detalles Bibliográficos
Autores: Bargallo Gonzalez, Mireia|||0000-0001-6792-4556, Martin Martinez, Javier|||0000-0001-5938-5898, Rodríguez Martínez, Rosana|||0000-0002-4565-6703, Acero Leal, María Cruz, Nafria, Montserrat|||0000-0002-9549-2890, Campabadal, Francesca|||0000-0001-7758-4567, Aymerich Humet, Xavier|||0000-0002-5874-6257
Tipo de recurso: artículo
Fecha de publicación:2015
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:136895
Acceso en línea:https://ddd.uab.cat/record/136895
https://dx.doi.org/urn:doi:10.1016/j.mee.2015.04.046
Access Level:acceso abierto
Palabra clave:Conductive filament
HfO2
Ni
Resistive random access memory
RRAM
Random telegraph noise
RTN
Variability
Descripción
Sumario:In this work, random telegraph noise (RTN) associated to discrete current fluctuations in the high resistive state of Ni/HfO2-based RRAM devices is investigated. For this purpose, a dedicated software tool has been developed to control the instrumentation and to perform successive and smart RTN measurements in the time domain. After data acquisition, the advanced Weighted Time Lag (WTL) method is employed to accurately identify the contribution of multiple electrically active defects in multilevel RTN signals. Finally, the internal dynamics of trapping and de-trapping processes through the defects close to the filamentary path and its dependence on voltage and time are analyzed.

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