Momentum-locked spin between topological and defect states in 1D patterns on bilayer graphene

Gating Bernal bilayer graphene breaks the inversion symmetry so that the stacking AB/BA boundaries within the gap reveal topologically protected states. In this study, we theoretically investigate arrays where the AB and BA domains are periodically patterned with experimentally identified defect lin...

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Detalles Bibliográficos
Autores: Guerrero-Avilés, R., Ayuela, A., Chico Gómez, Leonor María, Jaskólski, W., Pelc, M.
Tipo de recurso: artículo
Fecha de publicación:2025
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/123664
Acceso en línea:https://hdl.handle.net/20.500.14352/123664
Access Level:acceso abierto
Palabra clave:538.9
Boundaries
Transport
Order
Física de materiales
2211 Física del Estado Sólido
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spelling Momentum-locked spin between topological and defect states in 1D patterns on bilayer grapheneGuerrero-Avilés, R.Ayuela, A.Chico Gómez, Leonor MaríaJaskólski, W.Pelc, M.538.9BoundariesTransportOrderFísica de materiales2211 Física del Estado SólidoGating Bernal bilayer graphene breaks the inversion symmetry so that the stacking AB/BA boundaries within the gap reveal topologically protected states. In this study, we theoretically investigate arrays where the AB and BA domains are periodically patterned with experimentally identified defect lines. In the calculations we consider electron-electron interaction effects using density functional theory. Our findings reveal the existence of topological states within a gap induced by the patterning without an applied gate voltage. Furthermore, with an applied gate potential, the defect lines introduce spin-polarized states pinned within the gap and exhibit ferromagnetically coupled states. Importantly, we observe a hybridization of magnetic and topological states near the valleys that form conducting channels characterized by spin-momentum locking. The effect persists even with slight n-doping and gate voltage; however, the progressively pinned n-doped defect states induce spin polarization in the topological and valley states. Additionally, the two-dimensional bands under doping conditions exhibit nesting across the Fermi surface, allowing for modulation of charge densities along the lines which are nearly commensurate with the underlying graphene-defect lines. These quasi-one-dimensional patterns in bilayer graphene show a new kind of spin-conducting channels with novel characteristics common to both spintronics and valleytronics.NatureUniversidad Complutense de Madrid20252025-08-0120252025-08-01journal articlehttp://purl.org/coar/resource_type/c_6501VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/123664reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)InglésengAgencia Estatal de Investigación http://dx.doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023 PID2022-139230NB-I00 EXPLORANDO LA INTERACCION DE EXCITACIONES ELECTRONICAS Y DINAMICAS EN NANOESTRUCTURAS Y SISTEMAS COMPLEJOSAgencia Estatal de Investigación http://dx.doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023 TED2021-132074B-C32Agencia Estatal de Investigación http://dx.doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023 PID2022-136285NB-C31 MODELIZACION Y SIMULACION DE FENOMENOS CUANTICOS EMERGENTES EN NANOMATERIALES ROTADOS Y CON INGENIERIA DE SIMETRIASopen accesshttp://purl.org/coar/access_right/c_abf2Attribution 4.0 Internationalhttp://creativecommons.org/licenses/by/4.0/info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/1236642026-06-02T12:44:21Z
dc.title.none.fl_str_mv Momentum-locked spin between topological and defect states in 1D patterns on bilayer graphene
title Momentum-locked spin between topological and defect states in 1D patterns on bilayer graphene
spellingShingle Momentum-locked spin between topological and defect states in 1D patterns on bilayer graphene
Guerrero-Avilés, R.
538.9
Boundaries
Transport
Order
Física de materiales
2211 Física del Estado Sólido
title_short Momentum-locked spin between topological and defect states in 1D patterns on bilayer graphene
title_full Momentum-locked spin between topological and defect states in 1D patterns on bilayer graphene
title_fullStr Momentum-locked spin between topological and defect states in 1D patterns on bilayer graphene
title_full_unstemmed Momentum-locked spin between topological and defect states in 1D patterns on bilayer graphene
title_sort Momentum-locked spin between topological and defect states in 1D patterns on bilayer graphene
dc.creator.none.fl_str_mv Guerrero-Avilés, R.
Ayuela, A.
Chico Gómez, Leonor María
Jaskólski, W.
Pelc, M.
author Guerrero-Avilés, R.
author_facet Guerrero-Avilés, R.
Ayuela, A.
Chico Gómez, Leonor María
Jaskólski, W.
Pelc, M.
author_role author
author2 Ayuela, A.
Chico Gómez, Leonor María
Jaskólski, W.
Pelc, M.
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 538.9
Boundaries
Transport
Order
Física de materiales
2211 Física del Estado Sólido
topic 538.9
Boundaries
Transport
Order
Física de materiales
2211 Física del Estado Sólido
description Gating Bernal bilayer graphene breaks the inversion symmetry so that the stacking AB/BA boundaries within the gap reveal topologically protected states. In this study, we theoretically investigate arrays where the AB and BA domains are periodically patterned with experimentally identified defect lines. In the calculations we consider electron-electron interaction effects using density functional theory. Our findings reveal the existence of topological states within a gap induced by the patterning without an applied gate voltage. Furthermore, with an applied gate potential, the defect lines introduce spin-polarized states pinned within the gap and exhibit ferromagnetically coupled states. Importantly, we observe a hybridization of magnetic and topological states near the valleys that form conducting channels characterized by spin-momentum locking. The effect persists even with slight n-doping and gate voltage; however, the progressively pinned n-doped defect states induce spin polarization in the topological and valley states. Additionally, the two-dimensional bands under doping conditions exhibit nesting across the Fermi surface, allowing for modulation of charge densities along the lines which are nearly commensurate with the underlying graphene-defect lines. These quasi-one-dimensional patterns in bilayer graphene show a new kind of spin-conducting channels with novel characteristics common to both spintronics and valleytronics.
publishDate 2025
dc.date.none.fl_str_mv 2025
2025-08-01
2025
2025-08-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/123664
url https://hdl.handle.net/20.500.14352/123664
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv Agencia Estatal de Investigación http://dx.doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023 PID2022-139230NB-I00 EXPLORANDO LA INTERACCION DE EXCITACIONES ELECTRONICAS Y DINAMICAS EN NANOESTRUCTURAS Y SISTEMAS COMPLEJOS
Agencia Estatal de Investigación http://dx.doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023 TED2021-132074B-C32
Agencia Estatal de Investigación http://dx.doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023 PID2022-136285NB-C31 MODELIZACION Y SIMULACION DE FENOMENOS CUANTICOS EMERGENTES EN NANOMATERIALES ROTADOS Y CON INGENIERIA DE SIMETRIAS
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
Attribution 4.0 International
http://creativecommons.org/licenses/by/4.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
Attribution 4.0 International
http://creativecommons.org/licenses/by/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Nature
publisher.none.fl_str_mv Nature
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,808905

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