Metal-Nitride-oxide-semiconductor light-emitting devices for general lighting.
The potential for application of silicon nitride-based light sources to general lighting is reported. The mechanism of current injection and transport in silicon nitride layers and silicon oxide tunnel layers is determined by electro-optical characterization of both bi- and tri-layers. It is shown t...
| Autores: | , , , , , , , |
|---|---|
| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2011 |
| País: | España |
| Institución: | Universidad de Barcelona |
| Repositorio: | Dipòsit Digital de la UB |
| OAI Identifier: | oai:diposit.ub.edu:2445/32210 |
| Acceso en línea: | https://hdl.handle.net/2445/32210 |
| Access Level: | acceso abierto |
| Palabra clave: | Luminescència Física de l'estat sòlid Luminotècnia Dispositius electroòptics Luminescence Solid state physics Lighting Electrooptical devices |
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Metal-Nitride-oxide-semiconductor light-emitting devices for general lighting.Berencén Ramírez, Yonder AntonioCarreras, JosepJambois, OlivierRamírez Ramírez, Joan ManelRodríguez, J. A.Domínguez, Carlos (Domínguez Horna)Hunt, Charles E.Garrido Fernández, BlasLuminescènciaFísica de l'estat sòlidLuminotècniaDispositius electroòpticsLuminescenceSolid state physicsLightingElectrooptical devicesThe potential for application of silicon nitride-based light sources to general lighting is reported. The mechanism of current injection and transport in silicon nitride layers and silicon oxide tunnel layers is determined by electro-optical characterization of both bi- and tri-layers. It is shown that red luminescence is due to bipolar injection by direct tunneling, whereas Poole-Frenkel ionization is responsible for blue-green emission. The emission appears warm white to the eye, and the technology has potential for large-area lighting devices. A photometric study, including color rendering, color quality and luminous efficacy of radiation, measured under various AC excitation conditions, is given for a spectrum deemed promising for lighting. A correlated color temperature of 4800K was obtained using a 35% duty cycle of the AC excitation signal. Under these conditions, values for general color rendering index of 93 and luminous efficacy of radiation of 112 lm/W are demonstrated. This proof of concept demonstrates that mature silicon technology, which is extendable to lowcost, large-area lamps, can be used for general lighting purposes. Once the external quantum efficiency is improved to exceed 10%, this technique could be competitive with other energy-efficient solid-state lighting options. ©2011 Optical Society of America OCIS codes: (230.2090) Electro-optical devices; (150.2950) Illumination.Optical Society of America2011info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttps://hdl.handle.net/2445/32210Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)reponame:Dipòsit Digital de la UBinstname:Universidad de BarcelonaInglésReproducció del document publicat a: http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-103-A234Optics Express, 2011, vol. 19, num. S3, p. A234-A244(c) Optical Society of America, 2011info:eu-repo/semantics/openAccessoai:diposit.ub.edu:2445/322102026-05-27T06:46:51Z |
| dc.title.none.fl_str_mv |
Metal-Nitride-oxide-semiconductor light-emitting devices for general lighting. |
| title |
Metal-Nitride-oxide-semiconductor light-emitting devices for general lighting. |
| spellingShingle |
Metal-Nitride-oxide-semiconductor light-emitting devices for general lighting. Berencén Ramírez, Yonder Antonio Luminescència Física de l'estat sòlid Luminotècnia Dispositius electroòptics Luminescence Solid state physics Lighting Electrooptical devices |
| title_short |
Metal-Nitride-oxide-semiconductor light-emitting devices for general lighting. |
| title_full |
Metal-Nitride-oxide-semiconductor light-emitting devices for general lighting. |
| title_fullStr |
Metal-Nitride-oxide-semiconductor light-emitting devices for general lighting. |
| title_full_unstemmed |
Metal-Nitride-oxide-semiconductor light-emitting devices for general lighting. |
| title_sort |
Metal-Nitride-oxide-semiconductor light-emitting devices for general lighting. |
| dc.creator.none.fl_str_mv |
Berencén Ramírez, Yonder Antonio Carreras, Josep Jambois, Olivier Ramírez Ramírez, Joan Manel Rodríguez, J. A. Domínguez, Carlos (Domínguez Horna) Hunt, Charles E. Garrido Fernández, Blas |
| author |
Berencén Ramírez, Yonder Antonio |
| author_facet |
Berencén Ramírez, Yonder Antonio Carreras, Josep Jambois, Olivier Ramírez Ramírez, Joan Manel Rodríguez, J. A. Domínguez, Carlos (Domínguez Horna) Hunt, Charles E. Garrido Fernández, Blas |
| author_role |
author |
| author2 |
Carreras, Josep Jambois, Olivier Ramírez Ramírez, Joan Manel Rodríguez, J. A. Domínguez, Carlos (Domínguez Horna) Hunt, Charles E. Garrido Fernández, Blas |
| author2_role |
author author author author author author author |
| dc.subject.none.fl_str_mv |
Luminescència Física de l'estat sòlid Luminotècnia Dispositius electroòptics Luminescence Solid state physics Lighting Electrooptical devices |
| topic |
Luminescència Física de l'estat sòlid Luminotècnia Dispositius electroòptics Luminescence Solid state physics Lighting Electrooptical devices |
| description |
The potential for application of silicon nitride-based light sources to general lighting is reported. The mechanism of current injection and transport in silicon nitride layers and silicon oxide tunnel layers is determined by electro-optical characterization of both bi- and tri-layers. It is shown that red luminescence is due to bipolar injection by direct tunneling, whereas Poole-Frenkel ionization is responsible for blue-green emission. The emission appears warm white to the eye, and the technology has potential for large-area lighting devices. A photometric study, including color rendering, color quality and luminous efficacy of radiation, measured under various AC excitation conditions, is given for a spectrum deemed promising for lighting. A correlated color temperature of 4800K was obtained using a 35% duty cycle of the AC excitation signal. Under these conditions, values for general color rendering index of 93 and luminous efficacy of radiation of 112 lm/W are demonstrated. This proof of concept demonstrates that mature silicon technology, which is extendable to lowcost, large-area lamps, can be used for general lighting purposes. Once the external quantum efficiency is improved to exceed 10%, this technique could be competitive with other energy-efficient solid-state lighting options. ©2011 Optical Society of America OCIS codes: (230.2090) Electro-optical devices; (150.2950) Illumination. |
| publishDate |
2011 |
| dc.date.none.fl_str_mv |
2011 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion |
| format |
article |
| status_str |
publishedVersion |
| dc.identifier.none.fl_str_mv |
https://hdl.handle.net/2445/32210 |
| url |
https://hdl.handle.net/2445/32210 |
| dc.language.none.fl_str_mv |
Inglés |
| language_invalid_str_mv |
Inglés |
| dc.relation.none.fl_str_mv |
Reproducció del document publicat a: http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-103-A234 Optics Express, 2011, vol. 19, num. S3, p. A234-A244 |
| dc.rights.none.fl_str_mv |
(c) Optical Society of America, 2011 info:eu-repo/semantics/openAccess |
| rights_invalid_str_mv |
(c) Optical Society of America, 2011 |
| eu_rights_str_mv |
openAccess |
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application/pdf |
| dc.publisher.none.fl_str_mv |
Optical Society of America |
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Optical Society of America |
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Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) reponame:Dipòsit Digital de la UB instname:Universidad de Barcelona |
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Universidad de Barcelona |
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Dipòsit Digital de la UB |
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Dipòsit Digital de la UB |
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1869404458245423104 |
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15.301603 |