Versatile Transition for Multilayer Compact Devices in Empty Substrate Integrated Waveguide
Empty Substrate Integrated Waveguide (ESIW) de- vices can provide high quality and completely integrated devices, but they are usually larger than the same ones implemented with alternative technologies. One of the most extended strategies to compact electronic devices is the use of multilayer techn...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2018 |
| País: | España |
| Institución: | Universidad de Castilla-La Mancha |
| Repositorio: | RUIdeRA. Repositorio Institucional de la UCLM |
| OAI Identifier: | oai:ruidera.uclm.es:10578/19713 |
| Acceso en línea: | http://hdl.handle.net/10578/19713 |
| Access Level: | acceso abierto |
| Palabra clave: | Empty substrate integrated waveguide (ESIW) Transition Multilayer |
| Sumario: | Empty Substrate Integrated Waveguide (ESIW) de- vices can provide high quality and completely integrated devices, but they are usually larger than the same ones implemented with alternative technologies. One of the most extended strategies to compact electronic devices is the use of multilayer technology. Nevertheless, to perform multilayer devices in empty substrate integrated waveguide, a versatile and efficient transition between guides in different layers is needed. Currently, only one mul- tilayer device is known in this ESIW technology, which is a transition between a pair of guides built in contiguous layers that requires complex and non-standard 3D manufacturing processes. In this letter, a multilayer transition to connect a pair of guides separated by an arbitrary number of layers is successfully designed and experimentally validated without 3D manufacturing processes. This novel and versatile transition opens the way to further develop multilayer compact devices in ESIW technology such as compact filters. |
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