AlxIn1-xN on Si (100) Solar Cells (x= 0-0.56) Deposited by RF Sputtering

Valdueza Felip, Sirona|||0000-0003-1817-5354; Blasco Chicano, Rodrigo; Olea, Javier; Díaz Lobo, Alba; Braña, Alejandro F.; Naranjo Vega, Fernando Bernabé|||0000-0002-2119-6749

AlxIn1-xN on Si (100) Solar Cells (x= 0-0.56) Deposited by RF Sputtering

We investigate the photovoltaic performance of solar cells based on n-AlxIn1-xN (x = 0-0.56) on p-Si (100) hetero-junctions deposited by radio frequency sputtering. The AlxIn1-xN layers own an optical bandgap absorption edge tuneable from 1.73 eV to 2.56 eV within the Al content range. This increase...

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Detalles Bibliográficos
Autores:	Valdueza Felip, Sirona\|\|\|0000-0003-1817-5354, Blasco Chicano, Rodrigo, Olea, Javier, Díaz Lobo, Alba, Braña, Alejandro F., Naranjo Vega, Fernando Bernabé\|\|\|0000-0002-2119-6749
Tipo de recurso:	artículo
Fecha de publicación:	2020
País:	España
Institución:	Universidad de Alcalá (UAH)
Repositorio:	e_Buah Biblioteca Digital Universidad de Alcalá
Idioma:	inglés
OAI Identifier:	oai:ebuah.uah.es:10017/63267
Acceso en línea:	http://hdl.handle.net/10017/63267 https://dx.doi.org/doi:10.3390/ma13102336
Access Level:	acceso abierto
Palabra clave:	AlInN Silicon Sputtering Solar cells Electrónica Electronics

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repository_id_str
spelling	AlxIn1-xN on Si (100) Solar Cells (x= 0-0.56) Deposited by RF SputteringValdueza Felip, Sirona\|\|\|0000-0003-1817-5354Blasco Chicano, RodrigoOlea, JavierDíaz Lobo, AlbaBraña, Alejandro F.Naranjo Vega, Fernando Bernabé\|\|\|0000-0002-2119-6749AlInNSiliconSputteringSolar cellsElectrónicaElectronicsWe investigate the photovoltaic performance of solar cells based on n-AlxIn1-xN (x = 0-0.56) on p-Si (100) hetero-junctions deposited by radio frequency sputtering. The AlxIn1-xN layers own an optical bandgap absorption edge tuneable from 1.73 eV to 2.56 eV within the Al content range. This increase of Al content results in more resistive layers (approximate to 10(-4)-1 Omegacm) while the residual carrier concentration drops from similar to 10(21) to similar to 10(19) cm(-3). As a result, the top n-contact resistance varies from approximate to 10(-1) to 1 M Omega for InN to Al0.56In0.44N-based devices, respectively. Best results are obtained for devices with 28% Al that exhibit a broad external quantum efficiency covering the full solar spectrum with a maximum of 80% at 750 nm, an open-circuit voltage of 0.39 V, a short-circuit current density of 17.1 mA/cm(2) and a conversion efficiency of 2.12% under air mass 1.5 global (AM1.5G) illumination (1 sun), rendering them promising for novel low-cost III-nitride on Si photovoltaic devices. For Al contents above 28%, the electrical performance of the structures lessens due to the high top-contact resistivity.20202020-05-01journal articlehttp://purl.org/coar/resource_type/c_6501NAhttp://purl.org/coar/version/c_be7fb7dd8ff6fe43info:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10017/63267https://dx.doi.org/doi:10.3390/ma13102336reponame:e_Buah Biblioteca Digital Universidad de Alcaláinstname:Universidad de Alcalá (UAH)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2Attribution-NonCommercial-NoDerivatives 4.0 Internationalhttp://creativecommons.org/licenses/by-nc-nd/4.0/info:eu-repo/semantics/openAccessoai:ebuah.uah.es:10017/632672026-06-18T11:13:07Z
dc.title.none.fl_str_mv	AlxIn1-xN on Si (100) Solar Cells (x= 0-0.56) Deposited by RF Sputtering
title	AlxIn1-xN on Si (100) Solar Cells (x= 0-0.56) Deposited by RF Sputtering
spellingShingle	AlxIn1-xN on Si (100) Solar Cells (x= 0-0.56) Deposited by RF Sputtering Valdueza Felip, Sirona\|\|\|0000-0003-1817-5354 AlInN Silicon Sputtering Solar cells Electrónica Electronics
title_short	AlxIn1-xN on Si (100) Solar Cells (x= 0-0.56) Deposited by RF Sputtering
title_full	AlxIn1-xN on Si (100) Solar Cells (x= 0-0.56) Deposited by RF Sputtering
title_fullStr	AlxIn1-xN on Si (100) Solar Cells (x= 0-0.56) Deposited by RF Sputtering
title_full_unstemmed	AlxIn1-xN on Si (100) Solar Cells (x= 0-0.56) Deposited by RF Sputtering
title_sort	AlxIn1-xN on Si (100) Solar Cells (x= 0-0.56) Deposited by RF Sputtering
dc.creator.none.fl_str_mv	Valdueza Felip, Sirona\|\|\|0000-0003-1817-5354 Blasco Chicano, Rodrigo Olea, Javier Díaz Lobo, Alba Braña, Alejandro F. Naranjo Vega, Fernando Bernabé\|\|\|0000-0002-2119-6749
author	Valdueza Felip, Sirona\|\|\|0000-0003-1817-5354
author_facet	Valdueza Felip, Sirona\|\|\|0000-0003-1817-5354 Blasco Chicano, Rodrigo Olea, Javier Díaz Lobo, Alba Braña, Alejandro F. Naranjo Vega, Fernando Bernabé\|\|\|0000-0002-2119-6749
author_role	author
author2	Blasco Chicano, Rodrigo Olea, Javier Díaz Lobo, Alba Braña, Alejandro F. Naranjo Vega, Fernando Bernabé\|\|\|0000-0002-2119-6749
author2_role	author author author author author
dc.subject.none.fl_str_mv	AlInN Silicon Sputtering Solar cells Electrónica Electronics
topic	AlInN Silicon Sputtering Solar cells Electrónica Electronics
description	We investigate the photovoltaic performance of solar cells based on n-AlxIn1-xN (x = 0-0.56) on p-Si (100) hetero-junctions deposited by radio frequency sputtering. The AlxIn1-xN layers own an optical bandgap absorption edge tuneable from 1.73 eV to 2.56 eV within the Al content range. This increase of Al content results in more resistive layers (approximate to 10(-4)-1 Omegacm) while the residual carrier concentration drops from similar to 10(21) to similar to 10(19) cm(-3). As a result, the top n-contact resistance varies from approximate to 10(-1) to 1 M Omega for InN to Al0.56In0.44N-based devices, respectively. Best results are obtained for devices with 28% Al that exhibit a broad external quantum efficiency covering the full solar spectrum with a maximum of 80% at 750 nm, an open-circuit voltage of 0.39 V, a short-circuit current density of 17.1 mA/cm(2) and a conversion efficiency of 2.12% under air mass 1.5 global (AM1.5G) illumination (1 sun), rendering them promising for novel low-cost III-nitride on Si photovoltaic devices. For Al contents above 28%, the electrical performance of the structures lessens due to the high top-contact resistivity.
publishDate	2020
dc.date.none.fl_str_mv	2020 2020-05-01
dc.type.none.fl_str_mv	journal article http://purl.org/coar/resource_type/c_6501 NA http://purl.org/coar/version/c_be7fb7dd8ff6fe43
dc.type.openaire.fl_str_mv	info:eu-repo/semantics/article
format	article
dc.identifier.none.fl_str_mv	http://hdl.handle.net/10017/63267 https://dx.doi.org/doi:10.3390/ma13102336
url	http://hdl.handle.net/10017/63267 https://dx.doi.org/doi:10.3390/ma13102336
dc.language.none.fl_str_mv	Inglés eng
language_invalid_str_mv	Inglés
language	eng
dc.rights.none.fl_str_mv	open access http://purl.org/coar/access_right/c_abf2 Attribution-NonCommercial-NoDerivatives 4.0 International http://creativecommons.org/licenses/by-nc-nd/4.0/
dc.rights.openaire.fl_str_mv	info:eu-repo/semantics/openAccess
rights_invalid_str_mv	open access http://purl.org/coar/access_right/c_abf2 Attribution-NonCommercial-NoDerivatives 4.0 International http://creativecommons.org/licenses/by-nc-nd/4.0/
eu_rights_str_mv	openAccess
dc.format.none.fl_str_mv	application/pdf
dc.source.none.fl_str_mv	reponame:e_Buah Biblioteca Digital Universidad de Alcalá instname:Universidad de Alcalá (UAH)
instname_str	Universidad de Alcalá (UAH)
reponame_str	e_Buah Biblioteca Digital Universidad de Alcalá
collection	e_Buah Biblioteca Digital Universidad de Alcalá
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score	15.811543

AlxIn1-xN on Si (100) Solar Cells (x= 0-0.56) Deposited by RF Sputtering

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