Ion-beam synthesis of amorphous SiC films: Structural analysis and recrystallization

The analysis of SiC films obtained by carbon ion implantation into amorphous Si (preamorphized by Ge ion implantation) has been performed by infrared and Raman scattering spectroscopies, transmission electron microscopy, Rutherford backscattering, and x‐ray photoelectron spectroscopy (XPS). The data...

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Authors: Serre, Christophe, Calvo Barrio, Lorenzo, Pérez Rodríguez, Alejandro, Romano Rodríguez, Albert, Morante i Lleonart, Joan Ramon, Pacaud, Y., Kögler, Reinhard, Heera, Viton, Skorupa, Wolfgang
Format: article
Status:Published version
Publication Date:1996
Country:España
Institution:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Repository:Recercat. Dipósit de la Recerca de Catalunya
OAI Identifier:oai:recercat.cat:2445/24744
Online Access:https://hdl.handle.net/2445/24744
Access Level:Open access
Keyword:Implantació d'ions
Silici
Ion implantation
Silicon
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spelling Ion-beam synthesis of amorphous SiC films: Structural analysis and recrystallizationSerre, ChristopheCalvo Barrio, LorenzoPérez Rodríguez, AlejandroRomano Rodríguez, AlbertMorante i Lleonart, Joan RamonPacaud, Y.Kögler, ReinhardHeera, VitonSkorupa, WolfgangImplantació d'ionsSiliciIon implantationSiliconThe analysis of SiC films obtained by carbon ion implantation into amorphous Si (preamorphized by Ge ion implantation) has been performed by infrared and Raman scattering spectroscopies, transmission electron microscopy, Rutherford backscattering, and x‐ray photoelectron spectroscopy (XPS). The data obtained show the formation of an amorphous Si1−xCx layer on top of the amorphous Si one by successive Ge and C implantations. The fitting of the XPS spectra indicates the presence of about 70% of Si–C bonds in addition to the Si–Si and C–C ones in the implanted region, with a composition in the range 0.35<x<0.6. This points out the existence of a partial chemical order in the layer, in between the cases of perfect mixing and complete chemical order. Recrystallization of the layers has been achieved by ion‐beam induced epitaxial crystallization (IBIEC), which gives rise to a nanocrystalline SiC layer. However, recrystallization is not complete, observing still the presence of Si–Si and C–C bonds in an amorphous phase. Moreover, the distribution of the different bonds in the IBIEC processed samples is similar to that from the as‐implanted ones. This suggests that during IBIEC homopolar bonds are not broken, and only regions with dominant Si–C heteropolar bonds recrystallize.American Institute of Physics2012201219962012info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersion7 p.application/pdfhttps://hdl.handle.net/2445/24744Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)InglésReproducció del document publicat a: http://dx.doi.org/10.1063/1.361514Journal of Applied Physics, 1996, vol. 79, núm. 9, p. 6907-6913http://dx.doi.org/10.1063/1.361514(c) American Institute of Physics, 1996info:eu-repo/semantics/openAccessoai:recercat.cat:2445/247442026-05-29T05:05:01Z
dc.title.none.fl_str_mv Ion-beam synthesis of amorphous SiC films: Structural analysis and recrystallization
title Ion-beam synthesis of amorphous SiC films: Structural analysis and recrystallization
spellingShingle Ion-beam synthesis of amorphous SiC films: Structural analysis and recrystallization
Serre, Christophe
Implantació d'ions
Silici
Ion implantation
Silicon
title_short Ion-beam synthesis of amorphous SiC films: Structural analysis and recrystallization
title_full Ion-beam synthesis of amorphous SiC films: Structural analysis and recrystallization
title_fullStr Ion-beam synthesis of amorphous SiC films: Structural analysis and recrystallization
title_full_unstemmed Ion-beam synthesis of amorphous SiC films: Structural analysis and recrystallization
title_sort Ion-beam synthesis of amorphous SiC films: Structural analysis and recrystallization
dc.creator.none.fl_str_mv Serre, Christophe
Calvo Barrio, Lorenzo
Pérez Rodríguez, Alejandro
Romano Rodríguez, Albert
Morante i Lleonart, Joan Ramon
Pacaud, Y.
Kögler, Reinhard
Heera, Viton
Skorupa, Wolfgang
author Serre, Christophe
author_facet Serre, Christophe
Calvo Barrio, Lorenzo
Pérez Rodríguez, Alejandro
Romano Rodríguez, Albert
Morante i Lleonart, Joan Ramon
Pacaud, Y.
Kögler, Reinhard
Heera, Viton
Skorupa, Wolfgang
author_role author
author2 Calvo Barrio, Lorenzo
Pérez Rodríguez, Alejandro
Romano Rodríguez, Albert
Morante i Lleonart, Joan Ramon
Pacaud, Y.
Kögler, Reinhard
Heera, Viton
Skorupa, Wolfgang
author2_role author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Implantació d'ions
Silici
Ion implantation
Silicon
topic Implantació d'ions
Silici
Ion implantation
Silicon
description The analysis of SiC films obtained by carbon ion implantation into amorphous Si (preamorphized by Ge ion implantation) has been performed by infrared and Raman scattering spectroscopies, transmission electron microscopy, Rutherford backscattering, and x‐ray photoelectron spectroscopy (XPS). The data obtained show the formation of an amorphous Si1−xCx layer on top of the amorphous Si one by successive Ge and C implantations. The fitting of the XPS spectra indicates the presence of about 70% of Si–C bonds in addition to the Si–Si and C–C ones in the implanted region, with a composition in the range 0.35<x<0.6. This points out the existence of a partial chemical order in the layer, in between the cases of perfect mixing and complete chemical order. Recrystallization of the layers has been achieved by ion‐beam induced epitaxial crystallization (IBIEC), which gives rise to a nanocrystalline SiC layer. However, recrystallization is not complete, observing still the presence of Si–Si and C–C bonds in an amorphous phase. Moreover, the distribution of the different bonds in the IBIEC processed samples is similar to that from the as‐implanted ones. This suggests that during IBIEC homopolar bonds are not broken, and only regions with dominant Si–C heteropolar bonds recrystallize.
publishDate 1996
dc.date.none.fl_str_mv 1996
2012
2012
2012
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/24744
url https://hdl.handle.net/2445/24744
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Reproducció del document publicat a: http://dx.doi.org/10.1063/1.361514
Journal of Applied Physics, 1996, vol. 79, núm. 9, p. 6907-6913
http://dx.doi.org/10.1063/1.361514
dc.rights.none.fl_str_mv (c) American Institute of Physics, 1996
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) American Institute of Physics, 1996
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 7 p.
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
reponame:Recercat. Dipósit de la Recerca de Catalunya
instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
instname_str Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
reponame_str Recercat. Dipósit de la Recerca de Catalunya
collection Recercat. Dipósit de la Recerca de Catalunya
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,812429

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