Influence of passivation, doping and geometrical parameters on the avalanche breakdown of GaN SBDs

[EN]The breakdown of GaN-based Schottky barrier diodes associated with impact-ionization events initiated by electrons injected by tunneling is physically analyzed by means of a Monte Carlo simulator self-consistently coupled with a two-dimensional solution of the Poisson equation. Simulations of a...

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Autores: Orfao, Beatriz, Peña, R. A., García Vasallo, Beatriz, Pérez Santos, María Susana, Mateos López, Javier, González Sánchez, Tomás
Tipo de recurso: artículo
Estado:Versión borrador
Fecha de publicación:2025
País:España
Institución:Universidad de Salamanca (USAL)
Repositorio:GREDOS. Repositorio Institucional de la Universidad de Salamanca
OAI Identifier:oai:gredos.usal.es:10366/169272
Acceso en línea:http://hdl.handle.net/10366/169272
Access Level:acceso abierto
Palabra clave:Schottky barrier diode
Impact ionization
Tunnel current
Breakdown
2203 Electrónica
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spelling Influence of passivation, doping and geometrical parameters on the avalanche breakdown of GaN SBDsOrfao, BeatrizPeña, R. A.García Vasallo, BeatrizPérez Santos, María SusanaMateos López, JavierGonzález Sánchez, TomásSchottky barrier diodeImpact ionizationTunnel currentBreakdown2203 Electrónica[EN]The breakdown of GaN-based Schottky barrier diodes associated with impact-ionization events initiated by electrons injected by tunneling is physically analyzed by means of a Monte Carlo simulator self-consistently coupled with a two-dimensional solution of the Poisson equation. Simulations of a realistic topology where different geometrical parameters are modified allow to identify their influence on the breakdown voltage. The correct physical modelling of two-dimensional effects is essential for a proper prediction of the breakdown. Epilayer doping and thickness, dielectric used for the passivation and lateral extension of the epilayer are analyzed. As expected, the lower the doping and the thicker the epilayer, the higher the value found for the breakdown voltage, but, interestingly, the results also indicate that the peak electric field present at the edge of the Schottky contact, which may be reduced by means of high-k dielectric passivation and a short lateral extension of the epilayer, plays a key role in the breakdown.Springer202620262025info:eu-repo/semantics/articleinfo:eu-repo/semantics/draftapplication/pdfhttp://hdl.handle.net/10366/169272reponame:GREDOS. Repositorio Institucional de la Universidad de Salamancainstname:Universidad de Salamanca (USAL)InglésPID2023-147555OB-I00PDC2023-145896-I00SA136P23Attribution-NonCommercial-NoDerivatives 4.0 Internacionalhttp://creativecommons.org/licenses/by-nc-nd/4.0/info:eu-repo/semantics/openAccessoai:gredos.usal.es:10366/1692722026-06-07T06:28:51Z
dc.title.none.fl_str_mv Influence of passivation, doping and geometrical parameters on the avalanche breakdown of GaN SBDs
title Influence of passivation, doping and geometrical parameters on the avalanche breakdown of GaN SBDs
spellingShingle Influence of passivation, doping and geometrical parameters on the avalanche breakdown of GaN SBDs
Orfao, Beatriz
Schottky barrier diode
Impact ionization
Tunnel current
Breakdown
2203 Electrónica
title_short Influence of passivation, doping and geometrical parameters on the avalanche breakdown of GaN SBDs
title_full Influence of passivation, doping and geometrical parameters on the avalanche breakdown of GaN SBDs
title_fullStr Influence of passivation, doping and geometrical parameters on the avalanche breakdown of GaN SBDs
title_full_unstemmed Influence of passivation, doping and geometrical parameters on the avalanche breakdown of GaN SBDs
title_sort Influence of passivation, doping and geometrical parameters on the avalanche breakdown of GaN SBDs
dc.creator.none.fl_str_mv Orfao, Beatriz
Peña, R. A.
García Vasallo, Beatriz
Pérez Santos, María Susana
Mateos López, Javier
González Sánchez, Tomás
author Orfao, Beatriz
author_facet Orfao, Beatriz
Peña, R. A.
García Vasallo, Beatriz
Pérez Santos, María Susana
Mateos López, Javier
González Sánchez, Tomás
author_role author
author2 Peña, R. A.
García Vasallo, Beatriz
Pérez Santos, María Susana
Mateos López, Javier
González Sánchez, Tomás
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv Schottky barrier diode
Impact ionization
Tunnel current
Breakdown
2203 Electrónica
topic Schottky barrier diode
Impact ionization
Tunnel current
Breakdown
2203 Electrónica
description [EN]The breakdown of GaN-based Schottky barrier diodes associated with impact-ionization events initiated by electrons injected by tunneling is physically analyzed by means of a Monte Carlo simulator self-consistently coupled with a two-dimensional solution of the Poisson equation. Simulations of a realistic topology where different geometrical parameters are modified allow to identify their influence on the breakdown voltage. The correct physical modelling of two-dimensional effects is essential for a proper prediction of the breakdown. Epilayer doping and thickness, dielectric used for the passivation and lateral extension of the epilayer are analyzed. As expected, the lower the doping and the thicker the epilayer, the higher the value found for the breakdown voltage, but, interestingly, the results also indicate that the peak electric field present at the edge of the Schottky contact, which may be reduced by means of high-k dielectric passivation and a short lateral extension of the epilayer, plays a key role in the breakdown.
publishDate 2025
dc.date.none.fl_str_mv 2025
2026
2026
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/draft
format article
status_str draft
dc.identifier.none.fl_str_mv http://hdl.handle.net/10366/169272
url http://hdl.handle.net/10366/169272
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv PID2023-147555OB-I00
PDC2023-145896-I00
SA136P23
dc.rights.none.fl_str_mv Attribution-NonCommercial-NoDerivatives 4.0 Internacional
http://creativecommons.org/licenses/by-nc-nd/4.0/
info:eu-repo/semantics/openAccess
rights_invalid_str_mv Attribution-NonCommercial-NoDerivatives 4.0 Internacional
http://creativecommons.org/licenses/by-nc-nd/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Springer
publisher.none.fl_str_mv Springer
dc.source.none.fl_str_mv reponame:GREDOS. Repositorio Institucional de la Universidad de Salamanca
instname:Universidad de Salamanca (USAL)
instname_str Universidad de Salamanca (USAL)
reponame_str GREDOS. Repositorio Institucional de la Universidad de Salamanca
collection GREDOS. Repositorio Institucional de la Universidad de Salamanca
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,811543

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