Time-resolved measurements on 2T2 -> 2E photoluminescence of Ti3+ in GaP

The time dependence of the 2 T 2 → 2 E photoluminescence transition of Ti 3 + Ga in GaP has been measured on semi-insulating, p-type conducting, and n-type conducting samples. A decay time τ 0 =2.0 μs was obtained at T=10 K. The temperature dependence of the decay time in the conducting samples is f...

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Detalles Bibliográficos
Autores: Roura Grabulosa, Pere, Benyattou, T., Guillot, G., Moncorge, R., Ulrici, W.
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:1992
País:España
Institución:Universidad de Barcelona
Repositorio:Dipòsit Digital de la UB
OAI Identifier:oai:diposit.ub.edu:2445/9849
Acceso en línea:https://hdl.handle.net/2445/9849
Access Level:acceso abierto
Palabra clave:Luminescència
Semiconductors
Photoluminescence
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spelling Time-resolved measurements on 2T2 -> 2E photoluminescence of Ti3+ in GaPRoura Grabulosa, PereBenyattou, T.Guillot, G.Moncorge, R.Ulrici, W.LuminescènciaSemiconductorsPhotoluminescenceSemiconductorsThe time dependence of the 2 T 2 → 2 E photoluminescence transition of Ti 3 + Ga in GaP has been measured on semi-insulating, p-type conducting, and n-type conducting samples. A decay time τ 0 =2.0 μs was obtained at T=10 K. The temperature dependence of the decay time in the conducting samples is found to be affected by the capture of free carriers by Ti 3 + Ga in the excited state whereas the results on p-type conducting samples suggest hole localization at the Ti 3 + Ga .The American Physical Society1992info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttps://hdl.handle.net/2445/9849Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)reponame:Dipòsit Digital de la UBinstname:Universidad de BarcelonaInglésReproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.45.11698Physical Review B, 1992, vol. 45, núm. 20, p. 11698-11701.http://dx.doi.org/10.1103/PhysRevB.45.11698(c) The American Physical Society, 1992info:eu-repo/semantics/openAccessoai:diposit.ub.edu:2445/98492026-05-27T06:46:51Z
dc.title.none.fl_str_mv Time-resolved measurements on 2T2 -> 2E photoluminescence of Ti3+ in GaP
title Time-resolved measurements on 2T2 -> 2E photoluminescence of Ti3+ in GaP
spellingShingle Time-resolved measurements on 2T2 -> 2E photoluminescence of Ti3+ in GaP
Roura Grabulosa, Pere
Luminescència
Semiconductors
Photoluminescence
Semiconductors
title_short Time-resolved measurements on 2T2 -> 2E photoluminescence of Ti3+ in GaP
title_full Time-resolved measurements on 2T2 -> 2E photoluminescence of Ti3+ in GaP
title_fullStr Time-resolved measurements on 2T2 -> 2E photoluminescence of Ti3+ in GaP
title_full_unstemmed Time-resolved measurements on 2T2 -> 2E photoluminescence of Ti3+ in GaP
title_sort Time-resolved measurements on 2T2 -> 2E photoluminescence of Ti3+ in GaP
dc.creator.none.fl_str_mv Roura Grabulosa, Pere
Benyattou, T.
Guillot, G.
Moncorge, R.
Ulrici, W.
author Roura Grabulosa, Pere
author_facet Roura Grabulosa, Pere
Benyattou, T.
Guillot, G.
Moncorge, R.
Ulrici, W.
author_role author
author2 Benyattou, T.
Guillot, G.
Moncorge, R.
Ulrici, W.
author2_role author
author
author
author
dc.subject.none.fl_str_mv Luminescència
Semiconductors
Photoluminescence
Semiconductors
topic Luminescència
Semiconductors
Photoluminescence
Semiconductors
description The time dependence of the 2 T 2 → 2 E photoluminescence transition of Ti 3 + Ga in GaP has been measured on semi-insulating, p-type conducting, and n-type conducting samples. A decay time τ 0 =2.0 μs was obtained at T=10 K. The temperature dependence of the decay time in the conducting samples is found to be affected by the capture of free carriers by Ti 3 + Ga in the excited state whereas the results on p-type conducting samples suggest hole localization at the Ti 3 + Ga .
publishDate 1992
dc.date.none.fl_str_mv 1992
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/9849
url https://hdl.handle.net/2445/9849
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.45.11698
Physical Review B, 1992, vol. 45, núm. 20, p. 11698-11701.
http://dx.doi.org/10.1103/PhysRevB.45.11698
dc.rights.none.fl_str_mv (c) The American Physical Society, 1992
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) The American Physical Society, 1992
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv The American Physical Society
publisher.none.fl_str_mv The American Physical Society
dc.source.none.fl_str_mv Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
reponame:Dipòsit Digital de la UB
instname:Universidad de Barcelona
instname_str Universidad de Barcelona
reponame_str Dipòsit Digital de la UB
collection Dipòsit Digital de la UB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,300724

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