Isotopic study of the nitrogen-related modes in N+-implanted ZnO
Micro-Raman measurements were performed to study the nitrogen-related modes in ZnO samples implanted with N+. The two stable N isotopes, N-14 and N-15, were implanted. Distinct peaks at 277 and 512 cm(-1) are observed irrespective of the implanted isotope, both before and after rapid thermal anneali...
| Autores: | , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2007 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/51109 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/51109 |
| Access Level: | acceso abierto |
| Palabra clave: | 537 Local Vibrational-Modes Raman-Scattering Doped ZnO Impurities Devices Ga. Electricidad Electrónica (Física) 2202.03 Electricidad |
| Sumario: | Micro-Raman measurements were performed to study the nitrogen-related modes in ZnO samples implanted with N+. The two stable N isotopes, N-14 and N-15, were implanted. Distinct peaks at 277 and 512 cm(-1) are observed irrespective of the implanted isotope, both before and after rapid thermal annealing. The insensitivity of the mode frequencies to the implanted isotope rules out the explanation of these modes as local vibrational modes involving N motion. These modes were not detected in ZnO samples implanted with Zn+, O+, or P+, which suggests that they may be associated with distortions/defects favored by the presence of N. |
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