Self-assembly morphology of block copolymers in sub-10 nm topographical guiding patterns

In this paper, we investigate the directed self-assembly of block copolymers in topographical guiding patterns with feature sizes in the range of the block copolymer half-pitch. In particular, we present the self-assembly of an 11.7 nm half-pitch block copolymer in sub-10 nm resolution guiding patte...

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Autores: Gottlieb, Steven|||0000-0003-1642-8602, Rösner, Benedikt|||0000-0001-8765-5904, Evangelio Araujo, Laura, Fernández Regúlez, Marta, Nogales, Aurora|||0000-0002-2494-3551, García-Gutiérrez, Mari Cruz|||0000-0002-3604-1512, Keller, Thomas F.|||0000-0002-3770-6344, Fraxedas, Jordi|||0000-0002-2821-4831, Ezquerra, Tiberio A., David, Christian, Pérez Murano, Francesc|||0000-0002-4647-8558
Formato: artículo
Fecha de publicación:2019
País:España
Recursos:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:204833
Acesso em linha:https://ddd.uab.cat/record/204833
https://dx.doi.org/urn:doi:10.1039/c8me00046h
Access Level:acceso abierto
Palavra-chave:Block copolymer self-assembly
Directed self-assembly
Energy differences
Experimental evidence
Free-energy model
Hydrogen silsesquioxane
Processing windows
Self-assembly morphology
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spelling Self-assembly morphology of block copolymers in sub-10 nm topographical guiding patternsGottlieb, Steven|||0000-0003-1642-8602Rösner, Benedikt|||0000-0001-8765-5904Evangelio Araujo, LauraFernández Regúlez, MartaNogales, Aurora|||0000-0002-2494-3551García-Gutiérrez, Mari Cruz|||0000-0002-3604-1512Keller, Thomas F.|||0000-0002-3770-6344Fraxedas, Jordi|||0000-0002-2821-4831Ezquerra, Tiberio A.David, ChristianPérez Murano, Francesc|||0000-0002-4647-8558Block copolymer self-assemblyDirected self-assemblyEnergy differencesExperimental evidenceFree-energy modelHydrogen silsesquioxaneProcessing windowsSelf-assembly morphologyIn this paper, we investigate the directed self-assembly of block copolymers in topographical guiding patterns with feature sizes in the range of the block copolymer half-pitch. In particular, we present the self-assembly of an 11.7 nm half-pitch block copolymer in sub-10 nm resolution guiding patterns fabricated by the direct e-beam exposure of hydrogen silsesquioxane (HSQ). One result of this analysis is that the block copolymer self-assembles such that the guiding pattern features form part of the 3-D architecture of the film. We are capable of determining a shift in the block copolymer pitch as a function of the guiding pattern pitch with sub-nanometer accuracy by means of both real-space (AFM, SEM) and reciprocal-space techniques (GISAXS). An interesting result is that the block copolymer self-assembly in the studied structures depends on the guiding pattern pitch rather than on the trench width as in standard graphoepitaxy. We analyze the structures by means of a free energy model and present both theoretical and experimental evidence of a narrower processing window for such kind of guiding patterns than for regular directed self-assembly using wide topographical guiding patterns, and discuss the origin of this effect. We argue that chain deformation in the vicinity of the top cap of the guiding pattern feature is responsible for an increase of the free energy of the ordered state, which leads to a smaller energy difference between the defect-free and defective self-assembly than that for the observed self-assembly morphology. 22019-01-0120192019-01-01Articlehttp://purl.org/coar/resource_type/c_6501VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttps://ddd.uab.cat/record/204833https://dx.doi.org/urn:doi:10.1039/c8me00046hreponame:Dipòsit Digital de Documents de la UABinstname:Universitat Autònoma de BarcelonaInglésengEuropean Commission https://doi.org/10.13039/501100000780 654360Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 TEC2015-69864-RMinisterio de Economía y Competitividad https://doi.org/10.13039/501100003329 SEV-2013-0295open accesshttp://purl.org/coar/access_right/c_abf2Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.https://creativecommons.org/licenses/by/4.0/info:eu-repo/semantics/openAccessoai:ddd.uab.cat:2048332026-06-06T12:50:31Z
dc.title.none.fl_str_mv Self-assembly morphology of block copolymers in sub-10 nm topographical guiding patterns
title Self-assembly morphology of block copolymers in sub-10 nm topographical guiding patterns
spellingShingle Self-assembly morphology of block copolymers in sub-10 nm topographical guiding patterns
Gottlieb, Steven|||0000-0003-1642-8602
Block copolymer self-assembly
Directed self-assembly
Energy differences
Experimental evidence
Free-energy model
Hydrogen silsesquioxane
Processing windows
Self-assembly morphology
title_short Self-assembly morphology of block copolymers in sub-10 nm topographical guiding patterns
title_full Self-assembly morphology of block copolymers in sub-10 nm topographical guiding patterns
title_fullStr Self-assembly morphology of block copolymers in sub-10 nm topographical guiding patterns
title_full_unstemmed Self-assembly morphology of block copolymers in sub-10 nm topographical guiding patterns
title_sort Self-assembly morphology of block copolymers in sub-10 nm topographical guiding patterns
dc.creator.none.fl_str_mv Gottlieb, Steven|||0000-0003-1642-8602
Rösner, Benedikt|||0000-0001-8765-5904
Evangelio Araujo, Laura
Fernández Regúlez, Marta
Nogales, Aurora|||0000-0002-2494-3551
García-Gutiérrez, Mari Cruz|||0000-0002-3604-1512
Keller, Thomas F.|||0000-0002-3770-6344
Fraxedas, Jordi|||0000-0002-2821-4831
Ezquerra, Tiberio A.
David, Christian
Pérez Murano, Francesc|||0000-0002-4647-8558
author Gottlieb, Steven|||0000-0003-1642-8602
author_facet Gottlieb, Steven|||0000-0003-1642-8602
Rösner, Benedikt|||0000-0001-8765-5904
Evangelio Araujo, Laura
Fernández Regúlez, Marta
Nogales, Aurora|||0000-0002-2494-3551
García-Gutiérrez, Mari Cruz|||0000-0002-3604-1512
Keller, Thomas F.|||0000-0002-3770-6344
Fraxedas, Jordi|||0000-0002-2821-4831
Ezquerra, Tiberio A.
David, Christian
Pérez Murano, Francesc|||0000-0002-4647-8558
author_role author
author2 Rösner, Benedikt|||0000-0001-8765-5904
Evangelio Araujo, Laura
Fernández Regúlez, Marta
Nogales, Aurora|||0000-0002-2494-3551
García-Gutiérrez, Mari Cruz|||0000-0002-3604-1512
Keller, Thomas F.|||0000-0002-3770-6344
Fraxedas, Jordi|||0000-0002-2821-4831
Ezquerra, Tiberio A.
David, Christian
Pérez Murano, Francesc|||0000-0002-4647-8558
author2_role author
author
author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Block copolymer self-assembly
Directed self-assembly
Energy differences
Experimental evidence
Free-energy model
Hydrogen silsesquioxane
Processing windows
Self-assembly morphology
topic Block copolymer self-assembly
Directed self-assembly
Energy differences
Experimental evidence
Free-energy model
Hydrogen silsesquioxane
Processing windows
Self-assembly morphology
description In this paper, we investigate the directed self-assembly of block copolymers in topographical guiding patterns with feature sizes in the range of the block copolymer half-pitch. In particular, we present the self-assembly of an 11.7 nm half-pitch block copolymer in sub-10 nm resolution guiding patterns fabricated by the direct e-beam exposure of hydrogen silsesquioxane (HSQ). One result of this analysis is that the block copolymer self-assembles such that the guiding pattern features form part of the 3-D architecture of the film. We are capable of determining a shift in the block copolymer pitch as a function of the guiding pattern pitch with sub-nanometer accuracy by means of both real-space (AFM, SEM) and reciprocal-space techniques (GISAXS). An interesting result is that the block copolymer self-assembly in the studied structures depends on the guiding pattern pitch rather than on the trench width as in standard graphoepitaxy. We analyze the structures by means of a free energy model and present both theoretical and experimental evidence of a narrower processing window for such kind of guiding patterns than for regular directed self-assembly using wide topographical guiding patterns, and discuss the origin of this effect. We argue that chain deformation in the vicinity of the top cap of the guiding pattern feature is responsible for an increase of the free energy of the ordered state, which leads to a smaller energy difference between the defect-free and defective self-assembly than that for the observed self-assembly morphology.
publishDate 2019
dc.date.none.fl_str_mv 2
2019-01-01
2019
2019-01-01
dc.type.none.fl_str_mv Article
http://purl.org/coar/resource_type/c_6501
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://ddd.uab.cat/record/204833
https://dx.doi.org/urn:doi:10.1039/c8me00046h
url https://ddd.uab.cat/record/204833
https://dx.doi.org/urn:doi:10.1039/c8me00046h
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv European Commission https://doi.org/10.13039/501100000780 654360
Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 TEC2015-69864-R
Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 SEV-2013-0295
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://creativecommons.org/licenses/by/4.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://creativecommons.org/licenses/by/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Dipòsit Digital de Documents de la UAB
instname:Universitat Autònoma de Barcelona
instname_str Universitat Autònoma de Barcelona
reponame_str Dipòsit Digital de Documents de la UAB
collection Dipòsit Digital de Documents de la UAB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.300719

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