From Binary to Ternary Transition-Metal Nitrides

Magneto-ionics is an emerging actuation mechanism to control the magnetic properties of materials via voltage-driven ion motion. This effect largely relies on the strength and penetration of the induced electric field into the target material, the amount of generated ion transport pathways, and the...

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Authors: Tan, Zhengwei|||0000-0003-4142-0637, Martins, Sofia|||0000-0002-1801-1651, Escobar, Michael|||0000-0002-5813-3370, de Rojas, Julius|||0000-0002-1206-4744, Ibrahim, Fatima, Chshiev, Mairbek|||0000-0001-9232-7622, Quintana, Alberto|||0000-0002-9813-735X, Lopeandia, Aitor|||0000-0003-0566-8299, Costa-Krämer, José L.|||0000-0002-7664-2195, Menéndez, Enric|||0000-0003-3809-2863, Sort, Jordi|||0000-0003-1213-3639
Format: article
Publication Date:2022
Country:España
Institution:Universitat Autònoma de Barcelona
Repository:Dipòsit Digital de Documents de la UAB
Language:English
OAI Identifier:oai:ddd.uab.cat:268182
Online Access:https://ddd.uab.cat/record/268182
https://dx.doi.org/urn:doi:10.1021/acsami.2c12847
Access Level:Open access
Keyword:Magnetoelectricity
Voltage control of magnetism (VCM)
Magneto-ionics
Transition metal nitride
Ion diffusion
Description
Summary:Magneto-ionics is an emerging actuation mechanism to control the magnetic properties of materials via voltage-driven ion motion. This effect largely relies on the strength and penetration of the induced electric field into the target material, the amount of generated ion transport pathways, and the ionic mobility inside the magnetic media. Optimizing all these factors in a simple way is a huge challenge, although highly desirable for technological applications. Here, we demonstrate that the introduction of suitable transition-metal elements to binary nitride compounds can drastically boost magneto-ionics. More specifically, we show that the attained magneto-ionic effects in CoN films (i.e., saturation magnetization, toggling speeds, and cyclability) can be drastically enhanced through 10% substitution of Co by Mn in the thin-film composition. Incorporation of Mn leads to transformation from nanocrystalline into amorphous-like structures, as well as from metallic to semiconducting behaviors, resulting in an increase of N-ion transport channels. Ab initio calculations reveal a lower energy barrier for CoMn-N compared to Co-N that provides a fundamental understanding of the crucial role of Mn addition in the voltage-driven magnetic effects. These results constitute an important step forward toward enhanced voltage control of magnetism via electric field-driven ion motion.

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