Understanding W doping in wurtzite ZnO
In the context of bandgap engineering of the ZnO photoactive material for solar harvesting applications via W doping, a number of a priori discrepant experimental observations in the literature concerning ZnO c axis expansion/contraction, bandgap red- or blue-shifting, the Zn-substitutional or inter...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2018 |
| País: | España |
| Institución: | Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
| Repositorio: | Recercat. Dipósit de la Recerca de Catalunya |
| OAI Identifier: | oai:recercat.cat:2445/165803 |
| Acceso en línea: | https://hdl.handle.net/2445/165803 |
| Access Level: | acceso abierto |
| Palabra clave: | Ferromagnetisme Teoria del funcional de densitat Aliatges binaris Ferromagnetism Density functionals Binary systems (Metallurgy) |
| Sumario: | In the context of bandgap engineering of the ZnO photoactive material for solar harvesting applications via W doping, a number of a priori discrepant experimental observations in the literature concerning ZnO c axis expansion/contraction, bandgap red- or blue-shifting, the Zn-substitutional or interstitial nature of W atoms, or the W6+ charge compensation view with ZnO native defects are addressed by thorough density functional theory calculations on a series of bulk supercell models encompassing a large range of W contents. The present results reconcile the at first sight dissimilar observations by showing that interstitial W (Wi) is only energetically preferred over substitutional (WZn) at large large W doping concentrations; the WZn c lattice expansion can be compensated by a W triggered Zn-vacancy (VZn) c lattice contraction. The presence of WZn energetically fosters nearby VZn defects, and vice versa, up to a double VZn situation. The quantity of mono or divacancies explains the lattice contraction/expansion, and both limiting situations imply gap states which reduce the band gaps, but increase the energy gaps. Based on present results, the ZnO band gap red-shifting necessary for solar light triggered processes is achievable by W doping in Zn rich conditions. |
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