Proton irradiation effects on silicon heterojunction solar cells with MoOx selective contacts

In this study, we investigate the effects of proton irradiation on silicon-based heterojunction and molybdenum oxide (MoOx) selective contact solar cells. The main idea is to study their potential application in small satellites for measurement and monitoring. The irradiation dose simulates the aggr...

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Detalles Bibliográficos
Autores: Duarte Cano, Sebastián, Pérez Zenteno, Francisco José, Caudevilla Gutiérrez, Daniel, Olea Ariza, Javier, San Andrés Serrano, Enrique, del Prado Millán, Alvaro, Benítez Fernández, Rafael, Garcia Hemme, Eric, Rezaei, Mohammadreza, Clemente Barreira, Juan Antonio, Algaidy, Sari, Torres Almarza, Ignacio, Barrio Martin, Rocío, Ros Costals, Eloi|||0000-0002-1952-6614, Puigdollers i González, Joaquim|||0000-0002-1834-2565, Ortega Villasclaras, Pablo Rafael|||0000-0001-6577-614X, Voz Sánchez, Cristóbal|||0000-0002-0320-9606, García Hernansanz, Rodrigo
Tipo de recurso: artículo
Fecha de publicación:2025
País:España
Institución:Universitat Politècnica de Catalunya (UPC)
Repositorio:UPCommons. Portal del coneixement obert de la UPC
Idioma:inglés
OAI Identifier:oai:upcommons.upc.edu:2117/428859
Acceso en línea:https://hdl.handle.net/2117/428859
https://dx.doi.org/10.1016/j.mssp.2025.109312
Access Level:acceso abierto
Palabra clave:Photovoltaic
Defect
Proton irradiation
Recombination centers
Solar cell
Transition metal oxides
Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica
Descripción
Sumario:In this study, we investigate the effects of proton irradiation on silicon-based heterojunction and molybdenum oxide (MoOx) selective contact solar cells. The main idea is to study their potential application in small satellites for measurement and monitoring. The irradiation dose simulates the aggressive environment found in Low Earth Orbit (LEO), where many satellites currently use Group III-VI (GaInP/GaAs/Ge) solar cells due to their superior efficiency, albeit at a higher cost. The experimental approach includes fabrication, irradiation, and characterization methods. Our results show a decrease in fill factor (F.F.) and overall efficiency after irradiation, mainly caused by a decrease in shunt resistance and an increase in series resistance. In addition, open-circuit voltage (Voc) and short-circuit current (Isc) may be affected by displacement damage defects caused by the irradiation process within the active region or by the formation of new point defects.

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