Terahertz spectroscopic characterization of Ge3 Sb2 Te6 compounds for active applications
[EN] A study of the optical and dielectric properties of the non-volatile chalcogenide phase change material Ge3Sb2Te6 in the terahertz band (0.5-2.5 THz) is presented. Thermally annealed thin films of this material have been characterized with THz time-domain spectroscopy (THz-TDS), in addition to...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2025 |
| País: | España |
| Institución: | Universitat Politècnica de València (UPV) |
| Repositorio: | RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia |
| Idioma: | inglés |
| OAI Identifier: | oai:riunet.upv.es:10251/228878 |
| Acceso en línea: | https://riunet.upv.es/handle/10251/228878 |
| Access Level: | acceso abierto |
| Palabra clave: | Terahertz X-ray diffraction Dielectric properties |
| Sumario: | [EN] A study of the optical and dielectric properties of the non-volatile chalcogenide phase change material Ge3Sb2Te6 in the terahertz band (0.5-2.5 THz) is presented. Thermally annealed thin films of this material have been characterized with THz time-domain spectroscopy (THz-TDS), in addition to X-ray diffraction (XRD) and Raman spectroscopy. Optical constants, dielectric properties, and THz conductivity were derived from the THz-TDS data using a numerical method that takes into account the strong etalon effect of the thin film. The results are compared to the properties of Ge2Sb2Te5, which is commonly employed in photonics. Remarkably, Ge3Sb2Te6 exhibits considerably lower losses along the metal-to-insulator (MIT) transition. It has also been found that Ge3Sb2Te6 is more robust and that its optical constants are less affected by the substrate material. These results suggest that Ge3Sb2Te6 is potentially a more suitable candidate for high-performance applications requiring high contrast in the refractive index and low loss, such as in THz beam steering. |
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