Ultrathin metal transparent electrodes for the optoelectronics industry
Transparent electrodes (TEs) are the essential elements of many optoelectronic devices such as solar cells, touch screens, organic LEDs, and LCDs. Consequently demand for TEs is growing very steeply and the market value presently stands at 8 billion USDs. The state-of-art indium tin oxide (ITO) has...
| Autor: | |
|---|---|
| Tipo de recurso: | tesis doctoral |
| Fecha de publicación: | 2012 |
| País: | España |
| Institución: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/95617 |
| Acceso en línea: | https://hdl.handle.net/2117/95617 https://dx.doi.org/10.5821/dissertation-2117-95617 |
| Access Level: | acceso abierto |
| Palabra clave: | Elèctrodes Optoelectrònica Àrees temàtiques de la UPC::Enginyeria de la telecomunicació |
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Ultrathin metal transparent electrodes for the optoelectronics industry |
| title |
Ultrathin metal transparent electrodes for the optoelectronics industry |
| spellingShingle |
Ultrathin metal transparent electrodes for the optoelectronics industry Ghosh, Dhriti Sundar Elèctrodes Optoelectrònica Àrees temàtiques de la UPC::Enginyeria de la telecomunicació |
| title_short |
Ultrathin metal transparent electrodes for the optoelectronics industry |
| title_full |
Ultrathin metal transparent electrodes for the optoelectronics industry |
| title_fullStr |
Ultrathin metal transparent electrodes for the optoelectronics industry |
| title_full_unstemmed |
Ultrathin metal transparent electrodes for the optoelectronics industry |
| title_sort |
Ultrathin metal transparent electrodes for the optoelectronics industry |
| dc.creator.none.fl_str_mv |
Ghosh, Dhriti Sundar |
| author |
Ghosh, Dhriti Sundar |
| author_facet |
Ghosh, Dhriti Sundar |
| author_role |
author |
| dc.contributor.none.fl_str_mv |
Pruneri, Valerio |
| dc.subject.none.fl_str_mv |
Elèctrodes Optoelectrònica Àrees temàtiques de la UPC::Enginyeria de la telecomunicació |
| topic |
Elèctrodes Optoelectrònica Àrees temàtiques de la UPC::Enginyeria de la telecomunicació |
| description |
Transparent electrodes (TEs) are the essential elements of many optoelectronic devices such as solar cells, touch screens, organic LEDs, and LCDs. Consequently demand for TEs is growing very steeply and the market value presently stands at 8 billion USDs. The state-of-art indium tin oxide (ITO) has an excellent trade-off between optical transparency and electrical sheet resistance but suffers from several drawbacks, mainly the increasing cost due to indium shortage, and inadequate flexibility due to poor mechanical ductility. This thesis presents the development of a new class of TEs based on ultrathin metal films (UTMFs). The work started from understanding the fundamental aspects of UTMF growth and properties, and then focused on different UTMF based geometries, composition, and combination for potential applications in different optoelectronic applications. Single component ultrathin Ni and Cr films were shown to possess significantly high transparency in the ultraviolet (175–400 nm) and mid-infrared (2.5–25 μm) regions making them viable TE for devices such as UV photodiodes, and IR pyroelectric detectors. The natural oxidation process, which is a major concern for metal films, has been exploited to achieve stable metallic films by inducing a protective oxide layer. In another proposed novel design, incorporating an ad hoc conductive grid, the sheet resistance of UTMFs can be reduced by more than two orders of magnitude with negligible loss in transparency, which in turn eliminates the inverse trade-off relationship between optical transparency and electrical conductivity of continuous metal based TEs. A TE structure based on the ultrathin conductive Cu films with an application specific functionalized capping layer of Ti or Ni layer has been demonstrated. The properties of the TE can be tuned accordingly and show excellent stability against temperature, and oxidation. The suitability of Ag-Cu alloy films as TE as an alternative to ITO has been also investigated. The optical spectrum of such alloy films follows the average optical behavior of single component Cu and Ag layers, thus resulting in a much flatter optical response in the visible region. UTMFs combined with Al doped ZnO (AZO), which is possible ITO replacement, has also been demonstrated to show the possibility of hybridizing the two technologies. A bilayer Ag/AZO has been developed which can overcome the high reflection of metals and retain their good electrical behavior, while maintaining a minimum total film thickness. In another structure, UTMF capping layer were used to improve the stability of AZO. It was found that an ultrathin oxidized Ni capping layer with a thickness at percolation threshold greatly enhances the stability of AZO layer in harsh environment without affecting the electro-optical properties |
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2012 |
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2012 2012-10-11 2015 2015-02-19 |
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doctoral thesis http://purl.org/coar/resource_type/c_db06 VoR http://purl.org/coar/version/c_970fb48d4fbd8a85 |
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info:eu-repo/semantics/doctoralThesis |
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doctoralThesis |
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https://hdl.handle.net/2117/95617 https://dx.doi.org/10.5821/dissertation-2117-95617 |
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https://hdl.handle.net/2117/95617 https://dx.doi.org/10.5821/dissertation-2117-95617 |
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Inglés eng |
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Inglés |
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eng |
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open access http://purl.org/coar/access_right/c_abf2 http://creativecommons.org/licenses/by-nc-sa/3.0/es/ |
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Universitat Politècnica de Catalunya |
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Universitat Politècnica de Catalunya |
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Ultrathin metal transparent electrodes for the optoelectronics industryGhosh, Dhriti SundarElèctrodesOptoelectrònicaÀrees temàtiques de la UPC::Enginyeria de la telecomunicacióTransparent electrodes (TEs) are the essential elements of many optoelectronic devices such as solar cells, touch screens, organic LEDs, and LCDs. Consequently demand for TEs is growing very steeply and the market value presently stands at 8 billion USDs. The state-of-art indium tin oxide (ITO) has an excellent trade-off between optical transparency and electrical sheet resistance but suffers from several drawbacks, mainly the increasing cost due to indium shortage, and inadequate flexibility due to poor mechanical ductility. This thesis presents the development of a new class of TEs based on ultrathin metal films (UTMFs). The work started from understanding the fundamental aspects of UTMF growth and properties, and then focused on different UTMF based geometries, composition, and combination for potential applications in different optoelectronic applications. Single component ultrathin Ni and Cr films were shown to possess significantly high transparency in the ultraviolet (175–400 nm) and mid-infrared (2.5–25 μm) regions making them viable TE for devices such as UV photodiodes, and IR pyroelectric detectors. The natural oxidation process, which is a major concern for metal films, has been exploited to achieve stable metallic films by inducing a protective oxide layer. In another proposed novel design, incorporating an ad hoc conductive grid, the sheet resistance of UTMFs can be reduced by more than two orders of magnitude with negligible loss in transparency, which in turn eliminates the inverse trade-off relationship between optical transparency and electrical conductivity of continuous metal based TEs. A TE structure based on the ultrathin conductive Cu films with an application specific functionalized capping layer of Ti or Ni layer has been demonstrated. The properties of the TE can be tuned accordingly and show excellent stability against temperature, and oxidation. The suitability of Ag-Cu alloy films as TE as an alternative to ITO has been also investigated. The optical spectrum of such alloy films follows the average optical behavior of single component Cu and Ag layers, thus resulting in a much flatter optical response in the visible region. UTMFs combined with Al doped ZnO (AZO), which is possible ITO replacement, has also been demonstrated to show the possibility of hybridizing the two technologies. A bilayer Ag/AZO has been developed which can overcome the high reflection of metals and retain their good electrical behavior, while maintaining a minimum total film thickness. In another structure, UTMF capping layer were used to improve the stability of AZO. It was found that an ultrathin oxidized Ni capping layer with a thickness at percolation threshold greatly enhances the stability of AZO layer in harsh environment without affecting the electro-optical propertiesLos electrodos transparentes (TEs) son elementos básicos de muchos dispositivos optoelectrónicos, tales como células solares, pantallas táctiles, LEDs orgánicos i LCDs. En consecuencia, la demanda de éstos TEs está creciendo paulatinamente y con un valor de mercado actual de 8 billones de dólares (USD). El estado del arte del óxido de estaño dopado con Indio (ITO) ofrece un excelente compromiso entre transparencia óptica y resistencia eléctrica de hoja pero también tiene inconvenientes, principalmente de precio debido a la escasez del Indio, así como de una inadecuada flexibilidad debida a una baja ductilidad mecánica. En esta tesis se presenta el desarrollo de una nueva clase de TEs basados en capas ultradelgadas de metales (UTMFs). El trabajo empieza des de la comprensión de los aspectos fundamentales relacionados con el crecimiento de los UTMF y sus propiedades, para luego focalizarse en diferentes geometrías, composición y combinaciones para diferentes aplicaciones potenciales en el campo de la optoelectrónica. Las capas ultradelgadas monocomponentes de Ni y de Cr han mostrado tener significativamente alta transparencia en el rango ultravioleta (175-380nm) y en el Infrarrojo mediano (2.5-25um), haciéndolos, por tanto, TE viables para dispositivos tales como fotodiodos de UV y detectores piroeléctricos del IR. El proceso natural de oxidación, el cual es un problema central para las capas metálicas, ha sido aprovechado para conseguir capas metálicas estables gracias a una capa protectora de óxido. En otro novedoso diseño, gracias a la incorporación ad hoc de una malla conductora, la resistencia eléctrica de hoja de los UTMFs puede ser disminuida hasta dos órdenes de magnitud y con una pérdida de transmisión despreciable, y por lo tanto, elimina el compromiso limitante entre transparencia óptica y conductividad eléctrica de los TE basados en capas metálicas continuas. Una estructura de los TEs, basada en una capa conductora ultradelgada de Cu, la cual puede ser funcionalizada para aplicaciones específicas con capas protectoras de Ti o Ni, ha sido demostrada. Las propiedades del TE pueden ser modificadas bajo control y muestran una excelente estabilidad a la temperatura y la oxidación. La idoneidad de la aleación Ag-Cu como capa alternativa al ITO para los TE ha sido también investigada. El espectro óptico de esta aleación sigue el comportamiento óptico medio de las capas monocomponentes de Ag y Cu, y por lo tanto se obtiene una respuesta óptica mucho mas plana en la región del espectro visible. Los UTMFs en combinación con ZnO dopado con Al (AZO), el cual es una opción factible como sustituto del ITO, ha demostrado la posibilidad de hibridar ambas tecnologías. Una bicapa de Ag/AZO ha sido desarrollada, la cual evita el problema de la alta reflexión de los metales y mantiene a su vez sus buenas propiedades eléctricas con un espesor total de capa mínimo. En otra estructura, la capa protectora de los UTMF ha sido utilizada para mejorar la estabilidad del AZO. Se ha visto que una capa protectora ultra-delgada y oxidada de Ni con un espesor igual a su límite de percolación, mejora notablemente la estabilidad de las capas de AZO, manteniendo sus propiedades electro-ópticas, incluso en condiciones severasUniversitat Politècnica de CatalunyaPruneri, Valerio20122012-10-1120152015-02-19doctoral thesishttp://purl.org/coar/resource_type/c_db06VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/doctoralThesisapplication/pdfhttps://hdl.handle.net/2117/95617https://dx.doi.org/10.5821/dissertation-2117-95617reponame:UPCommons. Portal del coneixement obert de la UPCinstname:Universitat Politècnica de Catalunya (UPC)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2http://creativecommons.org/licenses/by-nc-sa/3.0/es/info:eu-repo/semantics/openAccessoai:upcommons.upc.edu:2117/956172026-05-27T15:37:01Z |
| score |
15.300719 |