Solution-Processed, Solid-State Solar Cells based on Environmentally Friendly AgBiS2 Nanocrystals
Solution-processed inorganic solar cells are a promising low-cost alternative to firstgeneration solar cells.1,2 Solution processing at low temperatures and the use of nontoxic and abundant elements can help minimize cost and facilitate regulatory acceptance. However, until now there has been no mat...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2016 |
| País: | España |
| Institución: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/100690 |
| Acceso en línea: | https://hdl.handle.net/2117/100690 |
| Access Level: | acceso abierto |
| Palabra clave: | solar cells Cèl·lules solars Àrees temàtiques de la UPC::Física |
| Sumario: | Solution-processed inorganic solar cells are a promising low-cost alternative to firstgeneration solar cells.1,2 Solution processing at low temperatures and the use of nontoxic and abundant elements can help minimize cost and facilitate regulatory acceptance. However, until now there has been no material that exhibits all of these features while demonstrating promising efficiencies. Many of the most promising solution-processed inorganic solar cells contain toxic elements such as lead or cadmium (perovskites,2,3 PbS,4 CdTe,5,6 CdS(Se)7,8) or scarce elements like tellurium or indium (CdTe, CIGS(Se)/CIS9,10). Others require high-temperature processes such as selenization or sintering or rely on vacuum deposition techniques ((Sb2S(Se)3,11–13 SnS,14,15 CZTS(Se)16). Here, we present AgBiS2 nanocrystals as a novel nontoxic,17 earth-abundant18 material for highperformance, solution-processed solar cells fabricated in ambient conditions at low temperatures (≤100°C). The AgBiS2 nanocrystals have favorable properties for solar-cell applications including a near-ideal bandgap and strong, broad absorption. We demonstrate a Newport certified power conversion efficiency of 6.3% with no hysteresis and a remarkably high short-circuit current density of about 22 mA·cm-2 for an active layer thickness of only ~35 nm. |
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