Spin-layer locked gapless states in gated bilayer graphene

Gated bilayer graphene exhibits spin-degenerate gapless states with a topological character localized at stacking domain walls. These states allow for one-dimensional currents along the domain walls. We herein demonstrate that these topologically protected currents are spin-polarized and locked in a...

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Detalles Bibliográficos
Autores: Jaskólski, Włodzimierz, Ayuela, Andrés
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2019
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/206204
Acceso en línea:http://hdl.handle.net/10261/206204
Access Level:acceso abierto
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spelling Spin-layer locked gapless states in gated bilayer grapheneJaskólski, WłodzimierzAyuela, AndrésGated bilayer graphene exhibits spin-degenerate gapless states with a topological character localized at stacking domain walls. These states allow for one-dimensional currents along the domain walls. We herein demonstrate that these topologically protected currents are spin-polarized and locked in a single layer when bilayer graphene contains stacking domain walls decorated with magnetic defects. The magnetic defects, which we model as π-vacancies, perturb the topological states but also lift their spin degeneracy. One gapless state survives the perturbation of these defects, and its spin polarization is largely localized in one layer. The spin-polarized current in the topological state flows in a single layer, and this finding suggests the possibility of effectively exploiting these states in spintronic applications.This work was partially supported by project FIS2016-76617-P of the Spanish Ministry of Economy and Competitiveness MINECO, the Basque Government under the ELKARTEK project (SUPER), and the Gobierno Vasco-UPV/EHU (Grant No. IT1246- 19). AA and WJ acknowledge the hospitality of the Institute of Physics at Nicolaus Copernicus University and the Donostia International Physics Center, respectively.Royal Society of Chemistry (UK)Ministerio de Economía y Competitividad (España)Eusko JaurlaritzaConsejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]2020202020192020info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/206204reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/FIS2016-76617-Phttp://dx.doi.org/10.1039/c9ra07319aSíinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/2062042026-05-22T06:33:51Z
dc.title.none.fl_str_mv Spin-layer locked gapless states in gated bilayer graphene
title Spin-layer locked gapless states in gated bilayer graphene
spellingShingle Spin-layer locked gapless states in gated bilayer graphene
Jaskólski, Włodzimierz
title_short Spin-layer locked gapless states in gated bilayer graphene
title_full Spin-layer locked gapless states in gated bilayer graphene
title_fullStr Spin-layer locked gapless states in gated bilayer graphene
title_full_unstemmed Spin-layer locked gapless states in gated bilayer graphene
title_sort Spin-layer locked gapless states in gated bilayer graphene
dc.creator.none.fl_str_mv Jaskólski, Włodzimierz
Ayuela, Andrés
author Jaskólski, Włodzimierz
author_facet Jaskólski, Włodzimierz
Ayuela, Andrés
author_role author
author2 Ayuela, Andrés
author2_role author
dc.contributor.none.fl_str_mv Ministerio de Economía y Competitividad (España)
Eusko Jaurlaritza
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
description Gated bilayer graphene exhibits spin-degenerate gapless states with a topological character localized at stacking domain walls. These states allow for one-dimensional currents along the domain walls. We herein demonstrate that these topologically protected currents are spin-polarized and locked in a single layer when bilayer graphene contains stacking domain walls decorated with magnetic defects. The magnetic defects, which we model as π-vacancies, perturb the topological states but also lift their spin degeneracy. One gapless state survives the perturbation of these defects, and its spin polarization is largely localized in one layer. The spin-polarized current in the topological state flows in a single layer, and this finding suggests the possibility of effectively exploiting these states in spintronic applications.
publishDate 2019
dc.date.none.fl_str_mv 2019
2020
2020
2020
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/206204
url http://hdl.handle.net/10261/206204
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv #PLACEHOLDER_PARENT_METADATA_VALUE#
info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/FIS2016-76617-P
http://dx.doi.org/10.1039/c9ra07319a
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv Royal Society of Chemistry (UK)
publisher.none.fl_str_mv Royal Society of Chemistry (UK)
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,812429

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