Enhancement of proximity-induced superconductivity in a planar Ge hole gas

Hole gases in planar germanium can have high mobilities in combination with strong spin-orbit interaction and electrically tunable g factors, and are therefore emerging as a promising platform for creating hybrid superconductor-semiconductor devices. A key challenge towards hybrid Ge-based quantum t...

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Detalles Bibliográficos
Autores: Aggarwal, Kushagra, Hofmann, Andrea, Jirovec, D.|||0000-0002-7197-4801, Prieto, Ivan, Sammak, Amir, Botifoll, Marc|||0000-0002-4876-6393, Martí-Sánchez, Sara|||0000-0003-4283-1489, Veldhorst, Menno|||0000-0001-9730-3523, Arbiol i Cobos, Jordi|||0000-0002-0695-1726, Scappucci, Giordano|||0000-0003-2512-0079, Danon, Jeroen, Katsaros, Georgios|||0000-0001-8342-202X
Tipo de recurso: artículo
Fecha de publicación:2021
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:268425
Acceso en línea:https://ddd.uab.cat/record/268425
https://dx.doi.org/urn:doi:10.1103/PhysRevResearch.3.L022005
Access Level:acceso abierto
Palabra clave:High magnetic fields
High-quality interface
Proximity-induced superconductivity
Quantum technologies
Spin orbit interactions
Superconducting contacts
Superconducting gaps
Superconductor-semiconductor devices
Descripción
Sumario:Hole gases in planar germanium can have high mobilities in combination with strong spin-orbit interaction and electrically tunable g factors, and are therefore emerging as a promising platform for creating hybrid superconductor-semiconductor devices. A key challenge towards hybrid Ge-based quantum technologies is the design of high-quality interfaces and superconducting contacts that are robust against magnetic fields. In this work, by combining the assets of aluminum, which provides good contact to the Ge, and niobium, which has a significant superconducting gap, we demonstrate highly transparent low-disordered JoFETs with relatively large ICRN products that are capable of withstanding high magnetic fields. We furthermore demonstrate the ability of phase-biasing individual JoFETs, opening up an avenue to explore topological superconductivity in planar Ge. The persistence of superconductivity in the reported hybrid devices beyond 1.8 T paves the way towards integrating spin qubits and proximity-induced superconductivity on the same chip.