Cross-plane thermal conductivity reduction of vertically uncorrelated Ge/Si quantum dot superlattices
A drastic reduction in temperature dependent cross-plane thermal conductivity κ occurs in Gequantum dotsuperlattices (QDSLs), depending on the vertical correlation between dots. Measurements show at least a twofold decrease of κ in uncorrelated dot structures as compared to structures with the same...
| Authors: | , , , , , , , |
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| Format: | article |
| Publication Date: | 2008 |
| Country: | España |
| Institution: | Universitat Autònoma de Barcelona |
| Repository: | Dipòsit Digital de Documents de la UAB |
| Language: | English |
| OAI Identifier: | oai:ddd.uab.cat:116048 |
| Online Access: | https://ddd.uab.cat/record/116048 https://dx.doi.org/urn:doi:10.1063/1.2957038 |
| Access Level: | Open access |
| Keyword: | Thermal conductivity Germanium Superlattices Elemental semiconductors Quantum dots Thin film growth Phonons Molecular beam epitaxy Nanostructures Thermoelectric devices |
| Summary: | A drastic reduction in temperature dependent cross-plane thermal conductivity κ occurs in Gequantum dotsuperlattices (QDSLs), depending on the vertical correlation between dots. Measurements show at least a twofold decrease of κ in uncorrelated dot structures as compared to structures with the same Si spacer of 20nm but good vertical dot alignment. The observed impact of disorder on the conductivity provides an alternative route to reduce the thermal conductivity of QDSLs. The results of this work have implications for the development of highly efficient thermoelectric materials and on-chip nanocooling devices. |
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