A Novel Photoconductive PVK/SiO_2 Interpenetrated Network Prepared by the Sol−Gel Process
In this work, we describe the preparation of a novel photoconductive sol−gel material based on an organic/inorganic interpenetrating network (IPN). The composition of the sol−gel photoconductive material mimics the well-known polymeric one based on poly(N-vinylcarbazole) (PVK) as the charge-transpor...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2003 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/51208 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/51208 |
| Access Level: | acceso abierto |
| Palabra clave: | 535 Photorefractive Polymer Photogeneration Composites Transport Óptica (Física) 2209.19 Óptica Física |
| Sumario: | In this work, we describe the preparation of a novel photoconductive sol−gel material based on an organic/inorganic interpenetrating network (IPN). The composition of the sol−gel photoconductive material mimics the well-known polymeric one based on poly(N-vinylcarbazole) (PVK) as the charge-transporting matrix and 2,4,7-trinitro-9-fluorenone (TNF) as the sensitizer. The resulting photoconductive material (PVK/SiO_2 IPN) shows a photosensitivity of 10^-11 cm/(Ω W) in range to that reported for some analogue polymeric compounds and the highest ever reported for hybrid sol−gel materials. |
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