Broadband anti-reflection coating using dielectric Si3N4 nanostructures. Application to amorphous-Si-H solar cells

Absorption of amorphous-Si hydrogenated (aSi-H) solar cells can be enhanced by using dielectric nanostructures made of Si3N4 that work like antireflection coatings. The analysis focus on the short-circuit current delivered by the cell under solar irradiance, and it is made taking into account every...

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Detalhes bibliográficos
Autores: Hamdy Mohamed Elshorbagy, Mahmoud, Abdel-Hady, Kamal, Kamal, Hala, Alda, Javier
Formato: artículo
Fecha de publicación:2017
País:España
Recursos:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/17582
Acesso em linha:https://hdl.handle.net/20.500.14352/17582
Access Level:acceso abierto
Palavra-chave:535.215
537
Resonant structures
Anti-reflection coating
Light trapping
Solar cell
Electricidad
Óptica (Física)
2202.03 Electricidad
2209.19 Óptica Física
id ES_0f4de4e9b341361dd67dfd127b36b0bf
oai_identifier_str oai:docta.ucm.es:20.500.14352/17582
network_acronym_str ES
network_name_str España
repository_id_str
spelling Broadband anti-reflection coating using dielectric Si3N4 nanostructures. Application to amorphous-Si-H solar cellsHamdy Mohamed Elshorbagy, MahmoudAbdel-Hady, KamalKamal, HalaAlda, Javier535.215537Resonant structuresAnti-reflection coatingLight trappingSolar cellElectricidadÓptica (Física)2202.03 Electricidad2209.19 Óptica FísicaAbsorption of amorphous-Si hydrogenated (aSi-H) solar cells can be enhanced by using dielectric nanostructures made of Si3N4 that work like antireflection coatings. The analysis focus on the short-circuit current delivered by the cell under solar irradiance, and it is made taking into account every layer and structure of an aSi-H cell. A customized design of the antireflection coating in the form of nanostructured dielectric layers, produces a short-circuit current enhancement of 15.2% with respect to the reference flat solar cell, and a lower reflectivity of the cell. Three different geometries of linear nanostructures have been analyzed and compared with quite similar results among them. An improvement in performance has been also obtained for realizable geometrical dimensions that could be fabricated while maintaining electric conductivity of the front contact.Elsevier Science BVUniversidad Complutense de Madrid20172017-01-0720172017-01-07journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/17582reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2Atribución-NoComercial-SinDerivadas 3.0 Españahttps://creativecommons.org/licenses/by-nc-nd/3.0/es/info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/175822026-06-02T12:44:21Z
dc.title.none.fl_str_mv Broadband anti-reflection coating using dielectric Si3N4 nanostructures. Application to amorphous-Si-H solar cells
title Broadband anti-reflection coating using dielectric Si3N4 nanostructures. Application to amorphous-Si-H solar cells
spellingShingle Broadband anti-reflection coating using dielectric Si3N4 nanostructures. Application to amorphous-Si-H solar cells
Hamdy Mohamed Elshorbagy, Mahmoud
535.215
537
Resonant structures
Anti-reflection coating
Light trapping
Solar cell
Electricidad
Óptica (Física)
2202.03 Electricidad
2209.19 Óptica Física
title_short Broadband anti-reflection coating using dielectric Si3N4 nanostructures. Application to amorphous-Si-H solar cells
title_full Broadband anti-reflection coating using dielectric Si3N4 nanostructures. Application to amorphous-Si-H solar cells
title_fullStr Broadband anti-reflection coating using dielectric Si3N4 nanostructures. Application to amorphous-Si-H solar cells
title_full_unstemmed Broadband anti-reflection coating using dielectric Si3N4 nanostructures. Application to amorphous-Si-H solar cells
title_sort Broadband anti-reflection coating using dielectric Si3N4 nanostructures. Application to amorphous-Si-H solar cells
dc.creator.none.fl_str_mv Hamdy Mohamed Elshorbagy, Mahmoud
Abdel-Hady, Kamal
Kamal, Hala
Alda, Javier
author Hamdy Mohamed Elshorbagy, Mahmoud
author_facet Hamdy Mohamed Elshorbagy, Mahmoud
Abdel-Hady, Kamal
Kamal, Hala
Alda, Javier
author_role author
author2 Abdel-Hady, Kamal
Kamal, Hala
Alda, Javier
author2_role author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 535.215
537
Resonant structures
Anti-reflection coating
Light trapping
Solar cell
Electricidad
Óptica (Física)
2202.03 Electricidad
2209.19 Óptica Física
topic 535.215
537
Resonant structures
Anti-reflection coating
Light trapping
Solar cell
Electricidad
Óptica (Física)
2202.03 Electricidad
2209.19 Óptica Física
description Absorption of amorphous-Si hydrogenated (aSi-H) solar cells can be enhanced by using dielectric nanostructures made of Si3N4 that work like antireflection coatings. The analysis focus on the short-circuit current delivered by the cell under solar irradiance, and it is made taking into account every layer and structure of an aSi-H cell. A customized design of the antireflection coating in the form of nanostructured dielectric layers, produces a short-circuit current enhancement of 15.2% with respect to the reference flat solar cell, and a lower reflectivity of the cell. Three different geometries of linear nanostructures have been analyzed and compared with quite similar results among them. An improvement in performance has been also obtained for realizable geometrical dimensions that could be fabricated while maintaining electric conductivity of the front contact.
publishDate 2017
dc.date.none.fl_str_mv 2017
2017-01-07
2017
2017-01-07
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/17582
url https://hdl.handle.net/20.500.14352/17582
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
Atribución-NoComercial-SinDerivadas 3.0 España
https://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
Atribución-NoComercial-SinDerivadas 3.0 España
https://creativecommons.org/licenses/by-nc-nd/3.0/es/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier Science BV
publisher.none.fl_str_mv Elsevier Science BV
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869403446734487552
score 15.300719

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