Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories

In New Space, the need for reduced cost, higher performance, and more prompt delivery plans in radiation-harsh environments have motivated spacecraft designers to use Commercial-Off-The-Shelf (COTS) memories and emerging technology devices. This paper investigates the behavior of state-of-the-art me...

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Detalhes bibliográficos
Autores: Korkian, Golnaz, León González, Daniel, Franco Peláez, Francisco Javier, Fabero Jiménez, Juan Carlos, Letiche, Manon, Morilla, Yolanda, Martín Holgado, Pedro, Puchner, Helmut, Mecha López, Hortensia, Clemente Barreira, Juan Antonio
Tipo de documento: artigo
Data de publicação:2022
País:España
Recursos:Universidad Complutense de Madrid (UCM)
Repositório:Docta Complutense
Idioma:inglês
OAI Identifier:oai:docta.ucm.es:20.500.14352/72912
Acesso em linha:https://hdl.handle.net/20.500.14352/72912
Access Level:Acceso aberto
Palavra-chave:537
Radiation
Electricidad
Electrónica (Física)
2202.03 Electricidad
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oai_identifier_str oai:docta.ucm.es:20.500.14352/72912
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repository_id_str
spelling Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile MemoriesKorkian, GolnazLeón González, DanielFranco Peláez, Francisco JavierFabero Jiménez, Juan CarlosLetiche, ManonMorilla, YolandaMartín Holgado, PedroPuchner, HelmutMecha López, HortensiaClemente Barreira, Juan Antonio537RadiationElectricidadElectrónica (Física)2202.03 ElectricidadIn New Space, the need for reduced cost, higher performance, and more prompt delivery plans in radiation-harsh environments have motivated spacecraft designers to use Commercial-Off-The-Shelf (COTS) memories and emerging technology devices. This paper investigates the behavior of state-of-the-art memories manufactured in emerging technologies, including Ferroelectric Random-Access Memory (FRAM), Resistive Random-Access Memory (ReRAM), and Magnetic Random-Access Memory (MRAM), against radiation effects in static and dynamic modes. Radiation-ground tests were conducted under 15-MeV and 1-MeV protons, thermal and 14.8-MeV neutrons leading to various categories of radiation effects. Experimental results will show clear evidence of the robustness of bitcells manufactured using these emerging technologies against radiation, but at the same time, some susceptibility in these devices to suffer radiation effects when working in dynamic mode. Experimental results with the CY15B102Q and CY15B104Q FRAMs (Infineon Technologies), the MB85AS4MT, and MB85AS8MT ReRAMs (Fujitsu), and the MR10Q010CSC and MR25H40CDF MRAMs (Everspin) will be presented and discussed.IEEEUniversidad Complutense de Madrid20222022-01-0120222022-01-01journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/72912reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2Atribución 3.0 Españahttps://creativecommons.org/licenses/by/3.0/es/info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/729122026-06-02T12:44:21Z
dc.title.none.fl_str_mv Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories
title Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories
spellingShingle Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories
Korkian, Golnaz
537
Radiation
Electricidad
Electrónica (Física)
2202.03 Electricidad
title_short Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories
title_full Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories
title_fullStr Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories
title_full_unstemmed Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories
title_sort Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories
dc.creator.none.fl_str_mv Korkian, Golnaz
León González, Daniel
Franco Peláez, Francisco Javier
Fabero Jiménez, Juan Carlos
Letiche, Manon
Morilla, Yolanda
Martín Holgado, Pedro
Puchner, Helmut
Mecha López, Hortensia
Clemente Barreira, Juan Antonio
author Korkian, Golnaz
author_facet Korkian, Golnaz
León González, Daniel
Franco Peláez, Francisco Javier
Fabero Jiménez, Juan Carlos
Letiche, Manon
Morilla, Yolanda
Martín Holgado, Pedro
Puchner, Helmut
Mecha López, Hortensia
Clemente Barreira, Juan Antonio
author_role author
author2 León González, Daniel
Franco Peláez, Francisco Javier
Fabero Jiménez, Juan Carlos
Letiche, Manon
Morilla, Yolanda
Martín Holgado, Pedro
Puchner, Helmut
Mecha López, Hortensia
Clemente Barreira, Juan Antonio
author2_role author
author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 537
Radiation
Electricidad
Electrónica (Física)
2202.03 Electricidad
topic 537
Radiation
Electricidad
Electrónica (Física)
2202.03 Electricidad
description In New Space, the need for reduced cost, higher performance, and more prompt delivery plans in radiation-harsh environments have motivated spacecraft designers to use Commercial-Off-The-Shelf (COTS) memories and emerging technology devices. This paper investigates the behavior of state-of-the-art memories manufactured in emerging technologies, including Ferroelectric Random-Access Memory (FRAM), Resistive Random-Access Memory (ReRAM), and Magnetic Random-Access Memory (MRAM), against radiation effects in static and dynamic modes. Radiation-ground tests were conducted under 15-MeV and 1-MeV protons, thermal and 14.8-MeV neutrons leading to various categories of radiation effects. Experimental results will show clear evidence of the robustness of bitcells manufactured using these emerging technologies against radiation, but at the same time, some susceptibility in these devices to suffer radiation effects when working in dynamic mode. Experimental results with the CY15B102Q and CY15B104Q FRAMs (Infineon Technologies), the MB85AS4MT, and MB85AS8MT ReRAMs (Fujitsu), and the MR10Q010CSC and MR25H40CDF MRAMs (Everspin) will be presented and discussed.
publishDate 2022
dc.date.none.fl_str_mv 2022
2022-01-01
2022
2022-01-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/72912
url https://hdl.handle.net/20.500.14352/72912
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
Atribución 3.0 España
https://creativecommons.org/licenses/by/3.0/es/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
Atribución 3.0 España
https://creativecommons.org/licenses/by/3.0/es/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv IEEE
publisher.none.fl_str_mv IEEE
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,300724

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