Monte Carlo calculation of In0.53Ga0.47As and InAs noise parameters

[EN]The increase of modern electronics performances depends on the ability to grow high-frequency, low-noise and low-power devices. Nowadays, InP technology is mature and In0.53Ga0.47As is clearly a material of interest. Moreover, Sb-based devices constitute the next step [1], which makes InAs trans...

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Detalles Bibliográficos
Autores: Karishy, Slyman, Palermo, Christophe, Sabatini, Giulio, Marinchio, Hugues, Varani, Luca, Mateos López, Javier, González Sánchez, Tomás
Tipo de recurso: artículo
Fecha de publicación:2017
País:España
Institución:Universidad de Salamanca (USAL)
Repositorio:GREDOS. Repositorio Institucional de la Universidad de Salamanca
OAI Identifier:oai:gredos.usal.es:10366/133629
Acceso en línea:http://hdl.handle.net/10366/133629
Access Level:acceso abierto
Palabra clave:InGaAs
Noise
Monte Carlo method
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spelling Monte Carlo calculation of In0.53Ga0.47As and InAs noise parametersKarishy, SlymanPalermo, ChristopheSabatini, GiulioMarinchio, HuguesVarani, LucaMateos López, JavierGonzález Sánchez, TomásInGaAsNoiseMonte Carlo method[EN]The increase of modern electronics performances depends on the ability to grow high-frequency, low-noise and low-power devices. Nowadays, InP technology is mature and In0.53Ga0.47As is clearly a material of interest. Moreover, Sb-based devices constitute the next step [1], which makes InAs transport and noise parameters analysis a relevant topic. The difficulties to obtain these quantities through experiments can be overcome by the onset of an appropriate numerical protocol. In this framework, we propose a Monte Carlo calculation of both diffusion coefficient and noise temperature of bulk In0.53Ga0.47As and InAs within a correlation functions formalism.IEEE201720172017info:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10366/133629reponame:GREDOS. Repositorio Institucional de la Universidad de Salamancainstname:Universidad de Salamanca (USAL)InglésTEC2013-41640-RSA022U16Attribution-NonCommercial-NoDerivs 3.0 Unportedhttps://creativecommons.org/licenses/by-nc-nd/3.0/info:eu-repo/semantics/openAccessoai:gredos.usal.es:10366/1336292026-06-07T06:28:51Z
dc.title.none.fl_str_mv Monte Carlo calculation of In0.53Ga0.47As and InAs noise parameters
title Monte Carlo calculation of In0.53Ga0.47As and InAs noise parameters
spellingShingle Monte Carlo calculation of In0.53Ga0.47As and InAs noise parameters
Karishy, Slyman
InGaAs
Noise
Monte Carlo method
title_short Monte Carlo calculation of In0.53Ga0.47As and InAs noise parameters
title_full Monte Carlo calculation of In0.53Ga0.47As and InAs noise parameters
title_fullStr Monte Carlo calculation of In0.53Ga0.47As and InAs noise parameters
title_full_unstemmed Monte Carlo calculation of In0.53Ga0.47As and InAs noise parameters
title_sort Monte Carlo calculation of In0.53Ga0.47As and InAs noise parameters
dc.creator.none.fl_str_mv Karishy, Slyman
Palermo, Christophe
Sabatini, Giulio
Marinchio, Hugues
Varani, Luca
Mateos López, Javier
González Sánchez, Tomás
author Karishy, Slyman
author_facet Karishy, Slyman
Palermo, Christophe
Sabatini, Giulio
Marinchio, Hugues
Varani, Luca
Mateos López, Javier
González Sánchez, Tomás
author_role author
author2 Palermo, Christophe
Sabatini, Giulio
Marinchio, Hugues
Varani, Luca
Mateos López, Javier
González Sánchez, Tomás
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv InGaAs
Noise
Monte Carlo method
topic InGaAs
Noise
Monte Carlo method
description [EN]The increase of modern electronics performances depends on the ability to grow high-frequency, low-noise and low-power devices. Nowadays, InP technology is mature and In0.53Ga0.47As is clearly a material of interest. Moreover, Sb-based devices constitute the next step [1], which makes InAs transport and noise parameters analysis a relevant topic. The difficulties to obtain these quantities through experiments can be overcome by the onset of an appropriate numerical protocol. In this framework, we propose a Monte Carlo calculation of both diffusion coefficient and noise temperature of bulk In0.53Ga0.47As and InAs within a correlation functions formalism.
publishDate 2017
dc.date.none.fl_str_mv 2017
2017
2017
dc.type.none.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10366/133629
url http://hdl.handle.net/10366/133629
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv TEC2013-41640-R
SA022U16
dc.rights.none.fl_str_mv Attribution-NonCommercial-NoDerivs 3.0 Unported
https://creativecommons.org/licenses/by-nc-nd/3.0/
info:eu-repo/semantics/openAccess
rights_invalid_str_mv Attribution-NonCommercial-NoDerivs 3.0 Unported
https://creativecommons.org/licenses/by-nc-nd/3.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv IEEE
publisher.none.fl_str_mv IEEE
dc.source.none.fl_str_mv reponame:GREDOS. Repositorio Institucional de la Universidad de Salamanca
instname:Universidad de Salamanca (USAL)
instname_str Universidad de Salamanca (USAL)
reponame_str GREDOS. Repositorio Institucional de la Universidad de Salamanca
collection GREDOS. Repositorio Institucional de la Universidad de Salamanca
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.301603

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