KTaO3(001) preparation methods in vacuum: effects on surface stoichiometry, crystallography, and in-gap states

KTaO3 single crystals with different orientations are used as substrates for the epitaxial growth of thin films and/or as hosts for two-dimensional electron gases. Due to the polar nature of the KTaO3(001) surface, one can expect difficulties and challenges to arise in its preparation. Maintaining g...

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Detalles Bibliográficos
Autores: Lucero Manzano, Andrea M., Cantero, Esteban D., Martínez, Emanuel Alberto, Bruno, Flavio Yair, Sánchez , Esteban A., Grizzi, Oscar
Tipo de recurso: artículo
Fecha de publicación:2025
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/120868
Acceso en línea:https://hdl.handle.net/20.500.14352/120868
Access Level:acceso abierto
Palabra clave:538.9
Two-dimensional electron gas
Forward recoil spectrometry
Auger electron spectroscopy
Secondary ion mass spectrometry
Transition metal oxides
Física del estado sólido
Física de materiales
2211 Física del Estado Sólido
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oai_identifier_str oai:docta.ucm.es:20.500.14352/120868
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repository_id_str
spelling KTaO3(001) preparation methods in vacuum: effects on surface stoichiometry, crystallography, and in-gap statesLucero Manzano, Andrea M.Cantero, Esteban D.Martínez, Emanuel AlbertoBruno, Flavio YairSánchez , Esteban A.Grizzi, Oscar538.9Two-dimensional electron gasForward recoil spectrometryAuger electron spectroscopySecondary ion mass spectrometryTransition metal oxidesFísica del estado sólidoFísica de materiales2211 Física del Estado SólidoKTaO3 single crystals with different orientations are used as substrates for the epitaxial growth of thin films and/or as hosts for two-dimensional electron gases. Due to the polar nature of the KTaO3(001) surface, one can expect difficulties and challenges to arise in its preparation. Maintaining good insulating characteristics without adding undesirable in-gap electronic states, obtaining good crystalline order up to the top surface layer, a sufficiently flat surface, and complete cleanliness of the surface (without water, C, or OH contaminants), are, in general, difficult conditions to accomplish simultaneously. Cleaving in vacuum is likely the best option for obtaining a clean surface. However, since KTaO3 is cubic and lacks a well-defined cleavage plane, this method is not suitable for sample growth or reproducible device fabrication. Here, we systematically evaluate the effect of typical preparation methods applied on the surfaces of KTaO3(001) single crystals. In particular, we used annealing in vacuum at different temperatures, light sputtering with Ar+ ions at a low energy (500 eV) followed by annealing, heavy Ar+ ion bombardment and annealing, and grazing Ar+ ion bombardment under continuous azimuthal rotation combined with both annealing in vacuum and in O2 atmosphere. Possible side effects after each treatment are evaluated by a combination of techniques, including low-energy ion scattering at forward angles, Auger electron spectroscopy, low-energy electron energy loss, x-ray photoelectron spectroscopy, low-energy electron diffraction, and time of flight-secondary ion mass spectrometry. Advantages and shortcomings of each preparation method are discussed in detail.AIP PublishingUniversidad Complutense de Madrid20252025-05-2820252025-05-28journal articlehttp://purl.org/coar/resource_type/c_6501AMhttp://purl.org/coar/version/c_ab4af688f83e57aainfo:eu-repo/semantics/articleapplication/pdfapplication/pdfhttps://hdl.handle.net/20.500.14352/120868reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/1208682026-06-02T12:44:21Z
dc.title.none.fl_str_mv KTaO3(001) preparation methods in vacuum: effects on surface stoichiometry, crystallography, and in-gap states
title KTaO3(001) preparation methods in vacuum: effects on surface stoichiometry, crystallography, and in-gap states
spellingShingle KTaO3(001) preparation methods in vacuum: effects on surface stoichiometry, crystallography, and in-gap states
Lucero Manzano, Andrea M.
538.9
Two-dimensional electron gas
Forward recoil spectrometry
Auger electron spectroscopy
Secondary ion mass spectrometry
Transition metal oxides
Física del estado sólido
Física de materiales
2211 Física del Estado Sólido
title_short KTaO3(001) preparation methods in vacuum: effects on surface stoichiometry, crystallography, and in-gap states
title_full KTaO3(001) preparation methods in vacuum: effects on surface stoichiometry, crystallography, and in-gap states
title_fullStr KTaO3(001) preparation methods in vacuum: effects on surface stoichiometry, crystallography, and in-gap states
title_full_unstemmed KTaO3(001) preparation methods in vacuum: effects on surface stoichiometry, crystallography, and in-gap states
title_sort KTaO3(001) preparation methods in vacuum: effects on surface stoichiometry, crystallography, and in-gap states
dc.creator.none.fl_str_mv Lucero Manzano, Andrea M.
Cantero, Esteban D.
Martínez, Emanuel Alberto
Bruno, Flavio Yair
Sánchez , Esteban A.
Grizzi, Oscar
author Lucero Manzano, Andrea M.
author_facet Lucero Manzano, Andrea M.
Cantero, Esteban D.
Martínez, Emanuel Alberto
Bruno, Flavio Yair
Sánchez , Esteban A.
Grizzi, Oscar
author_role author
author2 Cantero, Esteban D.
Martínez, Emanuel Alberto
Bruno, Flavio Yair
Sánchez , Esteban A.
Grizzi, Oscar
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 538.9
Two-dimensional electron gas
Forward recoil spectrometry
Auger electron spectroscopy
Secondary ion mass spectrometry
Transition metal oxides
Física del estado sólido
Física de materiales
2211 Física del Estado Sólido
topic 538.9
Two-dimensional electron gas
Forward recoil spectrometry
Auger electron spectroscopy
Secondary ion mass spectrometry
Transition metal oxides
Física del estado sólido
Física de materiales
2211 Física del Estado Sólido
description KTaO3 single crystals with different orientations are used as substrates for the epitaxial growth of thin films and/or as hosts for two-dimensional electron gases. Due to the polar nature of the KTaO3(001) surface, one can expect difficulties and challenges to arise in its preparation. Maintaining good insulating characteristics without adding undesirable in-gap electronic states, obtaining good crystalline order up to the top surface layer, a sufficiently flat surface, and complete cleanliness of the surface (without water, C, or OH contaminants), are, in general, difficult conditions to accomplish simultaneously. Cleaving in vacuum is likely the best option for obtaining a clean surface. However, since KTaO3 is cubic and lacks a well-defined cleavage plane, this method is not suitable for sample growth or reproducible device fabrication. Here, we systematically evaluate the effect of typical preparation methods applied on the surfaces of KTaO3(001) single crystals. In particular, we used annealing in vacuum at different temperatures, light sputtering with Ar+ ions at a low energy (500 eV) followed by annealing, heavy Ar+ ion bombardment and annealing, and grazing Ar+ ion bombardment under continuous azimuthal rotation combined with both annealing in vacuum and in O2 atmosphere. Possible side effects after each treatment are evaluated by a combination of techniques, including low-energy ion scattering at forward angles, Auger electron spectroscopy, low-energy electron energy loss, x-ray photoelectron spectroscopy, low-energy electron diffraction, and time of flight-secondary ion mass spectrometry. Advantages and shortcomings of each preparation method are discussed in detail.
publishDate 2025
dc.date.none.fl_str_mv 2025
2025-05-28
2025
2025-05-28
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
AM
http://purl.org/coar/version/c_ab4af688f83e57aa
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/120868
url https://hdl.handle.net/20.500.14352/120868
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv AIP Publishing
publisher.none.fl_str_mv AIP Publishing
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.811543

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