Carrier Concentration Analysis in 1.2 kV SiC Schottky Diodes Under Current Crowding
Die-level current crowding phenomena are analyzed at the microsecond timescale with an internal IR-Laser Deflection set-up. To this end, the 4H-SiC plasma-optical coefficient for the refractive index is reported for the first time. A SiC Schottky diode with an edge termination based on a junction te...
| Authors: | , , , , , |
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| Format: | article |
| Status: | Versión aceptada para publicación |
| Publication Date: | 2022 |
| Country: | España |
| Institution: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repository: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/345270 |
| Online Access: | http://hdl.handle.net/10261/345270 https://api.elsevier.com/content/abstract/scopus_id/85129631806 |
| Access Level: | Open access |
| Keyword: | current crowding | filamentary conduction | IIR-LD | plasma-optical coefficient | SiC Schottky diode |
| Summary: | Die-level current crowding phenomena are analyzed at the microsecond timescale with an internal IR-Laser Deflection set-up. To this end, the 4H-SiC plasma-optical coefficient for the refractive index is reported for the first time. A SiC Schottky diode with an edge termination based on a junction termination extension is used as a test vehicle. Under biasing conditions, the edge termination starts a local bipolar conduction along the device active area perimeter, leading to current crowding effects. Using refractive index measurements, a depth-resolved carrier profile is extracted and assessed using both, simulation and Free Carrier Absorption measurements. |
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