Supporting Information: Chemistry and interfacial structure promoting quasi-van der Waals epitaxial growth of WS2 nanosheets on sapphire for prospective application in field-effect transistors
Details of experimental setups, X-ray measurements, Al2O3(001) substrate miscut, WS2 in-plane orientation, chemical state, XSW analysis, CTR simulation, HAADF-STEM interface cross-section, DFT calculated energies, and interface structure.
Detalles Bibliográficos
| Autores: |
Majumder, Supriyo,
Shinde, Nitin,
Cavin, John,
Chen, Chen,
Dey, Arka Bikash,
Narayanachari, K. V. L. V.,
Zhang, Jiaqi,
Garcia-Wetten, David,
Dieguez, Oswaldo,
Hettler, Simon,
Cohen, Assael,
Keane, Denis T.,
Arenal, Raúl,
Rondinelli, James M.,
Ismach, Ariel,
Bedzyk, Michael |
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| Tipo de recurso: | conjunto de datos
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| Fecha de publicación: | 2025 |
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| País: | España |
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| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
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| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
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| OAI Identifier: | oai:digital.csic.es:10261/392944 |
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| Acceso en línea: | http://hdl.handle.net/10261/392944
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| Access Level: | acceso abierto |
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