Colloidal Silicon-Germanium Nanorod Heterostructures
Colloidal nanorods with axial Si and Ge heterojunction segments were produced by solution-liquid-solid (SLS) growth using Sn as a seed metal and trisilane and diphenylgermane as Si and Ge reactants. The low solubility of Si and Ge in Sn helps to generate abrupt Si-Ge heterojunction interfaces. To co...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2017 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:216239 |
| Acceso en línea: | https://ddd.uab.cat/record/216239 https://dx.doi.org/urn:doi:10.1021/acs.chemmater.7b03868 |
| Access Level: | acceso abierto |
| Palabra clave: | Colloidal nanorods Diphenylgermane Interfacial misfit dislocations Liquid solids Reaction byproducts Si-Ge heterojunction Side reactions Silicon Germanium |
| Sumario: | Colloidal nanorods with axial Si and Ge heterojunction segments were produced by solution-liquid-solid (SLS) growth using Sn as a seed metal and trisilane and diphenylgermane as Si and Ge reactants. The low solubility of Si and Ge in Sn helps to generate abrupt Si-Ge heterojunction interfaces. To control the composition of the nanorods, it was also necessary to limit an undesired side reaction between the Ge reaction byproduct tetraphenylgermane and trisilane. High-resolution transmission electron microscopy reveals that the Si-Ge interfaces are epitaxial, which gives rise to a significant amount of bond strain resulting in interfacial misfit dislocations that nucleate stacking faults in the nanorods. |
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