Exciton and multiexciton optical properties of single InAs/GaAs site-controlled quantum dots

We have studied the optical properties of InAs site-controlled quantum dots (SCQDs) grown on pre-patterned GaAs substrates. Since InAs nucleates preferentially on the lithography motifs, the location of the resulting QDs is determined by the pattern, which is fabricated by local oxidation nanolithog...

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Detalles Bibliográficos
Autores: Canet-Ferrer, J., Muñoz-Matutano, G., Herranz Zamorano, Jesús, Rivas, D., Alén, Benito, González Díez, Yolanda, Fuster, David, González Sotos, Luisa, Martínez Pastor, Juan Pascual
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2013
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/103450
Acceso en línea:http://hdl.handle.net/10261/103450
Access Level:acceso abierto
Descripción
Sumario:We have studied the optical properties of InAs site-controlled quantum dots (SCQDs) grown on pre-patterned GaAs substrates. Since InAs nucleates preferentially on the lithography motifs, the location of the resulting QDs is determined by the pattern, which is fabricated by local oxidation nanolithography. Optical characterization has been performed on such SCQDs to study the fundamental and excited states. At the ground state different exciton complex transitions of about 500 μeV linewidth have been identified and the fine structure splitting of the neutral exciton has been determined (≈65 μeV). The observed electronic structure covers the demands of future quantum information technologies. © 2013 AIP Publishing LLC.

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