Magnetic anisotropy axis reorientation at ultrathin FePt films
Ultrathin FePt films (thickness between 1 nm and 5 nm) were studied for non‐volatile memories applications. The films were magnetron sputtered on monocrystalline MgO⟨001⟩ substrates at 500 °C. The films are polycrystalline, except the 1 nm thick film which is not continuous. It is shown that films w...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2017 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/181470 |
| Acceso en línea: | http://hdl.handle.net/10261/181470 |
| Access Level: | acceso abierto |
| Palabra clave: | FePt Thin films Non-volatile memories Magnetic anisotropy Crystal structures Anomalous Hall effect |
| Sumario: | Ultrathin FePt films (thickness between 1 nm and 5 nm) were studied for non‐volatile memories applications. The films were magnetron sputtered on monocrystalline MgO⟨001⟩ substrates at 500 °C. The films are polycrystalline, except the 1 nm thick film which is not continuous. It is shown that films with thickness higher than 2.7 nm have L10 structure and perpendicular magnetic anisotropy, while a transition to in‐plane anisotropy occurs for thinner films. The out‐of‐plane coercivity drops from 16 kOe at the thicker film to 0.5 kOe at the thinner one. |
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