KCN chemical etching of van der Waals Sb2Se3 thin films synthesized at low temperature leads to inverted surface polarity and improved solar cell efficiency

Recent developments in Sb2Se3 van der Waals material as an absorber candidate for thin film photovoltaic applications have demonstrated the importance of surface management for improving the conversion efficiency of this technology. Sb2Se3 thin films’ versatility in delivering good efficiencies in b...

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Detalles Bibliográficos
Autores: Jiménez Guerra, Maykel|||0000-0002-1778-8805, Calvo Barrio, Lorenzo, Asensi López, José Miguel, Caño Prades, Ivan|||0000-0003-4226-1527, Yan, Shunya, Barrena Villas, Esther, Puigdollers i González, Joaquim|||0000-0002-1834-2565, Jehl, Zacharie Victor Samuel Na|||0000-0002-2610-5973, Sánchez González, Yudania|||0000-0002-5740-1150, Saucedo Silva, Edgardo Ademar|||0000-0003-2123-6162
Tipo de recurso: artículo
Fecha de publicación:2024
País:España
Institución:Universitat Politècnica de Catalunya (UPC)
Repositorio:UPCommons. Portal del coneixement obert de la UPC
Idioma:inglés
OAI Identifier:oai:upcommons.upc.edu:2117/402049
Acceso en línea:https://hdl.handle.net/2117/402049
https://dx.doi.org/10.1021/acsaem.3c01584
Access Level:acceso abierto
Palabra clave:Solar cells
Solar batteries
Antimony selenide
Etching
Thin film
Buried junction
KCN etching
Bromine etching
Cèl·lules solars
Bateries solars
Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars
Descripción
Sumario:Recent developments in Sb2Se3 van der Waals material as an absorber candidate for thin film photovoltaic applications have demonstrated the importance of surface management for improving the conversion efficiency of this technology. Sb2Se3 thin films’ versatility in delivering good efficiencies in both superstrate and substrate configurations, coupled with a compatibility with various low-temperature deposition techniques (below 500 °C and often below 350 °C), makes them highly attractive for advanced photovoltaic applications. This study presents a comparative analysis of the most effective chemical etchings developed for related thin film chalcogenide technologies to identify and understand the most appropriate surface chemical treatments for Sb2Se3 in substrate configuration, synthesized using a sequential process at very low temperatures (320 °C). Eight different chemical etchings were tested and investigated, and the results show that only KCN-based solutions lead to an improvement in the solar cell’s performance, primarily due to an increase in the fill factor. Surface analysis of the samples shows that KCN etching produces very Sb-rich surfaces that do not affect the properties of the bulk. It is proposed that this Sb-rich interface inverts the surface polarity, creating a “buried junction” with CdS, thereby explaining the improvement of the fill factor of the devices, as confirmed by device modeling. The results of this study underscore the importance of surface management in low-temperature synthesized Sb2Se3 absorbers, where Sb-rich interfaces are crucial for achieving high-efficiency devices. This research contributes to ongoing efforts to improve the performance of Sb2Se3 thin film photovoltaic technology and could pave the way for the development of more efficient solar cells with optimized interfaces.