Experimental characterization of CMOS photonic devices
Current electrical interconnects in super-computers and high-performance processors present a bottleneck in terms of bandwidth and power consumption. A migration to the optical domain in order to cope with the connectivity between units (e.g. CPUs and memory) is needed to overcome these issues. Zero...
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| Tipo de recurso: | tesis de maestría |
| Fecha de publicación: | 2016 |
| País: | España |
| Institución: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/91823 |
| Acceso en línea: | https://hdl.handle.net/2117/91823 |
| Access Level: | acceso abierto |
| Palabra clave: | Optical communications Photonics PN junctions Fibra óptica Circuits MOS Fotònica Fibres òptiques Silicon photonics Optical fiber Experimental results Optical networks Microprocessor architectures Uniones PN Resultados experimentales Redes ópticas Arquitectura de microprocesadores Comunicacions òptiques Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Telecomunicació òptica::Fotònica |
| Sumario: | Current electrical interconnects in super-computers and high-performance processors present a bottleneck in terms of bandwidth and power consumption. A migration to the optical domain in order to cope with the connectivity between units (e.g. CPUs and memory) is needed to overcome these issues. Zero-change CMOS photonic devices represent a very attractive solution to the design of optical on-chip links. This approach makes use of up-to-date CMOS process, having enormous benefits regarding integration with state-of-the-art electronics. Designing and characterizing zero-change CMOS photonic devices is key for the future of optical interconnects. This thesis presents the characterization both theoretical and experimental of a Silicon-Germanium ring resonator modulator. It represents the first ever depletion modulator up to the date using SiGe as an active material. Moreover, it shows the best wavelength shift reported so far for zero-change CMOS modulators, enhancing the shift of a pure Silicon device. The demonstration of this device begins a new era of optical modulator designs using silicon-germanium to enhance modulation efficiency, and therefore reduce power consumption. |
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