Architecture-level optimization on digital silicon photomultipliers for medical imaging

Silicon photomultipliers (SiPMs) are arrays of single-photon avalanche diodes (SPADs) connected in parallel. Analog silicon photomultipliers are built in custom technologies optimized for detection efficiency. Digital silicon photomultipliers are built in CMOS technology. Although CMOS SPADs are les...

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Autores: Bandi, Franco, Ilisie, Victor, Vornicu, Ion, Carmona Galán, Ricardo, Benlloch, José M., Rodríguez Vázquez, Ángel Benito
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2022
País:España
Institución:Universidad de Sevilla (US)
Repositorio:idUS. Depósito de Investigación de la Universidad de Sevilla
OAI Identifier:oai:idus.us.es:11441/129867
Acceso en línea:https://hdl.handle.net/11441/129867
https://doi.org/10.3390/s22010122
Access Level:acceso abierto
Palabra clave:Digital silicon photomultipliers (dSiPM)
Monte Carlo simulations
Positron emission tomography (PET)
Single-photon avalanche diode (SPAD)
Single-photon detectors
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spelling Architecture-level optimization on digital silicon photomultipliers for medical imagingBandi, FrancoIlisie, VictorVornicu, IonCarmona Galán, RicardoBenlloch, José M.Rodríguez Vázquez, Ángel BenitoDigital silicon photomultipliers (dSiPM)Monte Carlo simulationsPositron emission tomography (PET)Single-photon avalanche diode (SPAD)Single-photon detectorsSilicon photomultipliers (SiPMs) are arrays of single-photon avalanche diodes (SPADs) connected in parallel. Analog silicon photomultipliers are built in custom technologies optimized for detection efficiency. Digital silicon photomultipliers are built in CMOS technology. Although CMOS SPADs are less sensitive, they can incorporate additional functionality at the sensor plane, which is required in some applications for an accurate detection in terms of energy, timestamp, and spatial location. This additional circuitry comprises active quenching and recharge circuits, pulse combining and counting logic, and a time-to-digital converter. This, together with the disconnection of defective SPADs, results in a reduction of the light-sensitive area. In addition, the pile-up of pulses, in space and in time, translates into additional efficiency losses that are inherent to digital SiPMs. The design of digital SiPMs must include some sort of optimization of the pixel architecture in order to maximize sensitivity. In this paper, we identify the most relevant variables that determine the influence of SPAD yield, fill factor loss, and spatial and temporal pile-up in the photon detection efficiency. An optimum of 8% is found for different pixel sizes. The potential benefits of molecular imaging of these optimized and small-sized pixels with independent timestamping capabilities are also analyzed.European Union 765866Ministerio de Economía y Competitividad RTI2018-097088-B-C3US Office of Naval Research N00014-19-1- 2156European Research Council 695536Generalitat Valenciana APOSTD/2019/086Multidisciplinary Digital Publishing Institute (MDPI)Electrónica y Electromagnetismo2022info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfapplication/pdfhttps://hdl.handle.net/11441/129867https://doi.org/10.3390/s22010122reponame:idUS. Depósito de Investigación de la Universidad de Sevillainstname:Universidad de Sevilla (US)InglésSensors, 22 (1), 122.765866RTI2018-097088-B-C3N00014-19-1- 2156695536APOSTD/2019/086https://doi.org/10.3390/s22010122info:eu-repo/semantics/openAccessoai:idus.us.es:11441/1298672026-06-17T12:51:07Z
dc.title.none.fl_str_mv Architecture-level optimization on digital silicon photomultipliers for medical imaging
title Architecture-level optimization on digital silicon photomultipliers for medical imaging
spellingShingle Architecture-level optimization on digital silicon photomultipliers for medical imaging
Bandi, Franco
Digital silicon photomultipliers (dSiPM)
Monte Carlo simulations
Positron emission tomography (PET)
Single-photon avalanche diode (SPAD)
Single-photon detectors
title_short Architecture-level optimization on digital silicon photomultipliers for medical imaging
title_full Architecture-level optimization on digital silicon photomultipliers for medical imaging
title_fullStr Architecture-level optimization on digital silicon photomultipliers for medical imaging
title_full_unstemmed Architecture-level optimization on digital silicon photomultipliers for medical imaging
title_sort Architecture-level optimization on digital silicon photomultipliers for medical imaging
dc.creator.none.fl_str_mv Bandi, Franco
Ilisie, Victor
Vornicu, Ion
Carmona Galán, Ricardo
Benlloch, José M.
Rodríguez Vázquez, Ángel Benito
author Bandi, Franco
author_facet Bandi, Franco
Ilisie, Victor
Vornicu, Ion
Carmona Galán, Ricardo
Benlloch, José M.
Rodríguez Vázquez, Ángel Benito
author_role author
author2 Ilisie, Victor
Vornicu, Ion
Carmona Galán, Ricardo
Benlloch, José M.
Rodríguez Vázquez, Ángel Benito
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Electrónica y Electromagnetismo
dc.subject.none.fl_str_mv Digital silicon photomultipliers (dSiPM)
Monte Carlo simulations
Positron emission tomography (PET)
Single-photon avalanche diode (SPAD)
Single-photon detectors
topic Digital silicon photomultipliers (dSiPM)
Monte Carlo simulations
Positron emission tomography (PET)
Single-photon avalanche diode (SPAD)
Single-photon detectors
description Silicon photomultipliers (SiPMs) are arrays of single-photon avalanche diodes (SPADs) connected in parallel. Analog silicon photomultipliers are built in custom technologies optimized for detection efficiency. Digital silicon photomultipliers are built in CMOS technology. Although CMOS SPADs are less sensitive, they can incorporate additional functionality at the sensor plane, which is required in some applications for an accurate detection in terms of energy, timestamp, and spatial location. This additional circuitry comprises active quenching and recharge circuits, pulse combining and counting logic, and a time-to-digital converter. This, together with the disconnection of defective SPADs, results in a reduction of the light-sensitive area. In addition, the pile-up of pulses, in space and in time, translates into additional efficiency losses that are inherent to digital SiPMs. The design of digital SiPMs must include some sort of optimization of the pixel architecture in order to maximize sensitivity. In this paper, we identify the most relevant variables that determine the influence of SPAD yield, fill factor loss, and spatial and temporal pile-up in the photon detection efficiency. An optimum of 8% is found for different pixel sizes. The potential benefits of molecular imaging of these optimized and small-sized pixels with independent timestamping capabilities are also analyzed.
publishDate 2022
dc.date.none.fl_str_mv 2022
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/11441/129867
https://doi.org/10.3390/s22010122
url https://hdl.handle.net/11441/129867
https://doi.org/10.3390/s22010122
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Sensors, 22 (1), 122.
765866
RTI2018-097088-B-C3
N00014-19-1- 2156
695536
APOSTD/2019/086
https://doi.org/10.3390/s22010122
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Multidisciplinary Digital Publishing Institute (MDPI)
publisher.none.fl_str_mv Multidisciplinary Digital Publishing Institute (MDPI)
dc.source.none.fl_str_mv reponame:idUS. Depósito de Investigación de la Universidad de Sevilla
instname:Universidad de Sevilla (US)
instname_str Universidad de Sevilla (US)
reponame_str idUS. Depósito de Investigación de la Universidad de Sevilla
collection idUS. Depósito de Investigación de la Universidad de Sevilla
repository.name.fl_str_mv
repository.mail.fl_str_mv
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