Analytical Physical Model for Organic Metal-Electrolyte-Semiconductor Capacitors

This work presents the analytical physical modeling of undoped organic metal-electrolyte-semiconductor (OMES) capacitors in the framework of the Nernst-Planck-Poisson theory, including the presence of compact interfacial layers. This work derives an exact analytical solution, up to a quadrature, for...

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Detalles Bibliográficos
Autores: Huetter, Larissa, Kyndiah, Adrica, Gomila Lluch, Gabriel
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2022
País:España
Institución:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Repositorio:Recercat. Dipósit de la Recerca de Catalunya
OAI Identifier:oai:recercat.cat:2445/198621
Acceso en línea:https://hdl.handle.net/2445/198621
Access Level:acceso abierto
Palabra clave:Semiconductors orgànics
Enginyeria biomèdica
Bioelectrònica
Organic semiconductors
Biomedical engineering
Bioelectronics
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spelling Analytical Physical Model for Organic Metal-Electrolyte-Semiconductor CapacitorsHuetter, LarissaKyndiah, AdricaGomila Lluch, GabrielSemiconductors orgànicsEnginyeria biomèdicaBioelectrònicaOrganic semiconductorsBiomedical engineeringBioelectronicsThis work presents the analytical physical modeling of undoped organic metal-electrolyte-semiconductor (OMES) capacitors in the framework of the Nernst-Planck-Poisson theory, including the presence of compact interfacial layers. This work derives an exact analytical solution, up to a quadrature, for the stationary electric potential and charge density distributions in both the semiconductor film and the electrolyte solution, and from them the sheet semiconductor charge and the stationary differential capacitance are obtained as a function of the applied voltage. The dependence of these magnitudes on the physical device parameters, like the ionic concentration of the electrolyte, the capacitance of the interfacial compact layers and the injected hole density is then analyzed. This work shows that ionic diffusive effects in the electrolyte can play an important role in the device response, inducing a broadening of the transition from the weak to the strong accumulation regimes. This fact can make that the strong accumulation regime is not achieved in OMES within the usual voltage operation range of these devices. The analytical solution is validated by means of finite element numerical calculations. The implications of the results obtained on the physics of electrolyte gated organic field effect transistors (EGOFETs) are discussed.Wiley-VCH2023202320222023info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersion16 p.application/pdfhttps://hdl.handle.net/2445/198621Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)InglésReproducció del document publicat a: https://doi.org/10.1002/adts.202200698Advanced Theory And Simulations, 2022, vol. 6, num. 2200698https://doi.org/10.1002/adts.202200698cc by-nc-nd (c) Huetter, Larissa, 2022http://creativecommons.org/licenses/by-nc-nd/3.0/es/info:eu-repo/semantics/openAccessoai:recercat.cat:2445/1986212026-05-29T05:05:01Z
dc.title.none.fl_str_mv Analytical Physical Model for Organic Metal-Electrolyte-Semiconductor Capacitors
title Analytical Physical Model for Organic Metal-Electrolyte-Semiconductor Capacitors
spellingShingle Analytical Physical Model for Organic Metal-Electrolyte-Semiconductor Capacitors
Huetter, Larissa
Semiconductors orgànics
Enginyeria biomèdica
Bioelectrònica
Organic semiconductors
Biomedical engineering
Bioelectronics
title_short Analytical Physical Model for Organic Metal-Electrolyte-Semiconductor Capacitors
title_full Analytical Physical Model for Organic Metal-Electrolyte-Semiconductor Capacitors
title_fullStr Analytical Physical Model for Organic Metal-Electrolyte-Semiconductor Capacitors
title_full_unstemmed Analytical Physical Model for Organic Metal-Electrolyte-Semiconductor Capacitors
title_sort Analytical Physical Model for Organic Metal-Electrolyte-Semiconductor Capacitors
dc.creator.none.fl_str_mv Huetter, Larissa
Kyndiah, Adrica
Gomila Lluch, Gabriel
author Huetter, Larissa
author_facet Huetter, Larissa
Kyndiah, Adrica
Gomila Lluch, Gabriel
author_role author
author2 Kyndiah, Adrica
Gomila Lluch, Gabriel
author2_role author
author
dc.subject.none.fl_str_mv Semiconductors orgànics
Enginyeria biomèdica
Bioelectrònica
Organic semiconductors
Biomedical engineering
Bioelectronics
topic Semiconductors orgànics
Enginyeria biomèdica
Bioelectrònica
Organic semiconductors
Biomedical engineering
Bioelectronics
description This work presents the analytical physical modeling of undoped organic metal-electrolyte-semiconductor (OMES) capacitors in the framework of the Nernst-Planck-Poisson theory, including the presence of compact interfacial layers. This work derives an exact analytical solution, up to a quadrature, for the stationary electric potential and charge density distributions in both the semiconductor film and the electrolyte solution, and from them the sheet semiconductor charge and the stationary differential capacitance are obtained as a function of the applied voltage. The dependence of these magnitudes on the physical device parameters, like the ionic concentration of the electrolyte, the capacitance of the interfacial compact layers and the injected hole density is then analyzed. This work shows that ionic diffusive effects in the electrolyte can play an important role in the device response, inducing a broadening of the transition from the weak to the strong accumulation regimes. This fact can make that the strong accumulation regime is not achieved in OMES within the usual voltage operation range of these devices. The analytical solution is validated by means of finite element numerical calculations. The implications of the results obtained on the physics of electrolyte gated organic field effect transistors (EGOFETs) are discussed.
publishDate 2022
dc.date.none.fl_str_mv 2022
2023
2023
2023
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/198621
url https://hdl.handle.net/2445/198621
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Reproducció del document publicat a: https://doi.org/10.1002/adts.202200698
Advanced Theory And Simulations, 2022, vol. 6, num. 2200698
https://doi.org/10.1002/adts.202200698
dc.rights.none.fl_str_mv cc by-nc-nd (c) Huetter, Larissa, 2022
http://creativecommons.org/licenses/by-nc-nd/3.0/es/
info:eu-repo/semantics/openAccess
rights_invalid_str_mv cc by-nc-nd (c) Huetter, Larissa, 2022
http://creativecommons.org/licenses/by-nc-nd/3.0/es/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 16 p.
application/pdf
dc.publisher.none.fl_str_mv Wiley-VCH
publisher.none.fl_str_mv Wiley-VCH
dc.source.none.fl_str_mv Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
reponame:Recercat. Dipósit de la Recerca de Catalunya
instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
instname_str Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
reponame_str Recercat. Dipósit de la Recerca de Catalunya
collection Recercat. Dipósit de la Recerca de Catalunya
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,811543

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