Electrical properties of biomorphic SiC ceramics and SiC/Si composites fabricated from medium density fiberboard

A study has been made of the dependences of the electrical resistivity and the Hall coefficient on the temperature in the range 1.8-1300K and on magnetic fields of up to 28kOe for the biomorphic SiC/Si (MDF-SiC/Si) composite and biomorphic porous SiC (MDF-SiC) based upon artificial cellulosic precur...

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Autores: Orlova, T. S., Popov, V. V., Quispe Cancapa, J., Hernández Maldonado, D., Enrique Magariño, María Esther, Varela Feria, F.M., Ramírez de Arellano, A., Martínez Fernández, J.
Tipo de recurso: artículo
Fecha de publicación:2011
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/62073
Acceso en línea:http://hdl.handle.net/10261/62073
Access Level:acceso abierto
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spelling Electrical properties of biomorphic SiC ceramics and SiC/Si composites fabricated from medium density fiberboardOrlova, T. S.Popov, V. V.Quispe Cancapa, J.Hernández Maldonado, D.Enrique Magariño, María EstherVarela Feria, F.M.Ramírez de Arellano, A.Martínez Fernández, J.A study has been made of the dependences of the electrical resistivity and the Hall coefficient on the temperature in the range 1.8-1300K and on magnetic fields of up to 28kOe for the biomorphic SiC/Si (MDF-SiC/Si) composite and biomorphic porous SiC (MDF-SiC) based upon artificial cellulosic precursor (MDF - medium density fiberboards). It has been shown that electric transport in MDF-SiC is effected by carriers of n-type with a high concentration of ∿1020cm-3 and a low mobility of ∿0.4cm2V-1s-1. The specific features in the conductivity of MDF-SiC are explained by quantum effects arising in disordered systems and requiring quantum corrections to conductivity. The TEM studies confirmed the presence of disordering structural features (nanocrystalline regions) in MDF-SiC. The conductivity of MDF-SiC/Si composite originates primarily from Si component in the temperature range 1.8-500K and since ∿500 to 600K the contribution of MDF-SiC matrix becomes dominant. © 2010 Elsevier Ltd.This study was supported by the Russian Basic Research Foundation (project no. 7-03-91353NNF_a), the Presidium of the Russian Academy of Sciences (program no. P-03), and the Spanish Projects MAT 2007-30141-E and PET 2006-0658.Peer ReviewedElsevier2012201220112012info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501http://hdl.handle.net/10261/62073reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglésinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/620732026-05-22T06:33:51Z
dc.title.none.fl_str_mv Electrical properties of biomorphic SiC ceramics and SiC/Si composites fabricated from medium density fiberboard
title Electrical properties of biomorphic SiC ceramics and SiC/Si composites fabricated from medium density fiberboard
spellingShingle Electrical properties of biomorphic SiC ceramics and SiC/Si composites fabricated from medium density fiberboard
Orlova, T. S.
title_short Electrical properties of biomorphic SiC ceramics and SiC/Si composites fabricated from medium density fiberboard
title_full Electrical properties of biomorphic SiC ceramics and SiC/Si composites fabricated from medium density fiberboard
title_fullStr Electrical properties of biomorphic SiC ceramics and SiC/Si composites fabricated from medium density fiberboard
title_full_unstemmed Electrical properties of biomorphic SiC ceramics and SiC/Si composites fabricated from medium density fiberboard
title_sort Electrical properties of biomorphic SiC ceramics and SiC/Si composites fabricated from medium density fiberboard
dc.creator.none.fl_str_mv Orlova, T. S.
Popov, V. V.
Quispe Cancapa, J.
Hernández Maldonado, D.
Enrique Magariño, María Esther
Varela Feria, F.M.
Ramírez de Arellano, A.
Martínez Fernández, J.
author Orlova, T. S.
author_facet Orlova, T. S.
Popov, V. V.
Quispe Cancapa, J.
Hernández Maldonado, D.
Enrique Magariño, María Esther
Varela Feria, F.M.
Ramírez de Arellano, A.
Martínez Fernández, J.
author_role author
author2 Popov, V. V.
Quispe Cancapa, J.
Hernández Maldonado, D.
Enrique Magariño, María Esther
Varela Feria, F.M.
Ramírez de Arellano, A.
Martínez Fernández, J.
author2_role author
author
author
author
author
author
author
description A study has been made of the dependences of the electrical resistivity and the Hall coefficient on the temperature in the range 1.8-1300K and on magnetic fields of up to 28kOe for the biomorphic SiC/Si (MDF-SiC/Si) composite and biomorphic porous SiC (MDF-SiC) based upon artificial cellulosic precursor (MDF - medium density fiberboards). It has been shown that electric transport in MDF-SiC is effected by carriers of n-type with a high concentration of ∿1020cm-3 and a low mobility of ∿0.4cm2V-1s-1. The specific features in the conductivity of MDF-SiC are explained by quantum effects arising in disordered systems and requiring quantum corrections to conductivity. The TEM studies confirmed the presence of disordering structural features (nanocrystalline regions) in MDF-SiC. The conductivity of MDF-SiC/Si composite originates primarily from Si component in the temperature range 1.8-500K and since ∿500 to 600K the contribution of MDF-SiC matrix becomes dominant. © 2010 Elsevier Ltd.
publishDate 2011
dc.date.none.fl_str_mv 2011
2012
2012
2012
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/62073
url http://hdl.handle.net/10261/62073
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.811543

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