X-ray photoelectron spectroscopy analysis of ion¿beam¿induced oxidation of GaAs and AlGaAs

The oxidation of GaAs and AlGaAs targets subjected to O2+ bombardment has been analyzed, using in situ x¿ray photoelectron spectroscopy, as a function of time until steady state is reached. The oxides formed by the O2+ bombardment have been characterized in terms of composition and binding energy. A...

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Detalles Bibliográficos
Autores: Alay, Josep Lluís, Vandervorst, Wilfried
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:1992
País:España
Institución:Universidad de Barcelona
Repositorio:Dipòsit Digital de la UB
OAI Identifier:oai:diposit.ub.edu:2445/25043
Acceso en línea:https://hdl.handle.net/2445/25043
Access Level:acceso abierto
Palabra clave:Semiconductors
Microelectrònica
Química analítica
Espectroscòpia d'electrons
Microelectronics
Analytical chemistry
Electron spectroscopy
id ES_03bfd1b0d28b5df7930bf08d68fdd5df
oai_identifier_str oai:diposit.ub.edu:2445/25043
network_acronym_str ES
network_name_str España
repository_id_str
spelling X-ray photoelectron spectroscopy analysis of ion¿beam¿induced oxidation of GaAs and AlGaAsAlay, Josep LluísVandervorst, WilfriedSemiconductorsMicroelectrònicaQuímica analíticaEspectroscòpia d'electronsSemiconductorsMicroelectronicsAnalytical chemistryElectron spectroscopyThe oxidation of GaAs and AlGaAs targets subjected to O2+ bombardment has been analyzed, using in situ x¿ray photoelectron spectroscopy, as a function of time until steady state is reached. The oxides formed by the O2+ bombardment have been characterized in terms of composition and binding energy. A strong energy and angular dependence for the oxidation of As relative to Ga is found. Low energies as well as near normal angles of incidence favor the oxidation of As. The difference between Ga and As can be explained in terms of the formation enthalpy for the oxide and the excess supply of oxygen. In an AlGaAs target the Al is very quickly completely oxidized irrespective of the experimental conditions. The steady state composition of the altered layers show in all cases a preferential removal of As.American Institute of Physics1992info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttps://hdl.handle.net/2445/25043Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)reponame:Dipòsit Digital de la UBinstname:Universidad de BarcelonaInglésReproducció del document publicat a: http://dx.doi.org/10.1116/1.577731Journal of Vacuum Science Technology A-Vacuum Surfaces and Films, 1992, vol. 10, p. 2926-2930http://dx.doi.org/10.1116/1.577731(c) American Institute of Physics, 1992info:eu-repo/semantics/openAccessoai:diposit.ub.edu:2445/250432026-05-27T06:46:51Z
dc.title.none.fl_str_mv X-ray photoelectron spectroscopy analysis of ion¿beam¿induced oxidation of GaAs and AlGaAs
title X-ray photoelectron spectroscopy analysis of ion¿beam¿induced oxidation of GaAs and AlGaAs
spellingShingle X-ray photoelectron spectroscopy analysis of ion¿beam¿induced oxidation of GaAs and AlGaAs
Alay, Josep Lluís
Semiconductors
Microelectrònica
Química analítica
Espectroscòpia d'electrons
Semiconductors
Microelectronics
Analytical chemistry
Electron spectroscopy
title_short X-ray photoelectron spectroscopy analysis of ion¿beam¿induced oxidation of GaAs and AlGaAs
title_full X-ray photoelectron spectroscopy analysis of ion¿beam¿induced oxidation of GaAs and AlGaAs
title_fullStr X-ray photoelectron spectroscopy analysis of ion¿beam¿induced oxidation of GaAs and AlGaAs
title_full_unstemmed X-ray photoelectron spectroscopy analysis of ion¿beam¿induced oxidation of GaAs and AlGaAs
title_sort X-ray photoelectron spectroscopy analysis of ion¿beam¿induced oxidation of GaAs and AlGaAs
dc.creator.none.fl_str_mv Alay, Josep Lluís
Vandervorst, Wilfried
author Alay, Josep Lluís
author_facet Alay, Josep Lluís
Vandervorst, Wilfried
author_role author
author2 Vandervorst, Wilfried
author2_role author
dc.subject.none.fl_str_mv Semiconductors
Microelectrònica
Química analítica
Espectroscòpia d'electrons
Semiconductors
Microelectronics
Analytical chemistry
Electron spectroscopy
topic Semiconductors
Microelectrònica
Química analítica
Espectroscòpia d'electrons
Semiconductors
Microelectronics
Analytical chemistry
Electron spectroscopy
description The oxidation of GaAs and AlGaAs targets subjected to O2+ bombardment has been analyzed, using in situ x¿ray photoelectron spectroscopy, as a function of time until steady state is reached. The oxides formed by the O2+ bombardment have been characterized in terms of composition and binding energy. A strong energy and angular dependence for the oxidation of As relative to Ga is found. Low energies as well as near normal angles of incidence favor the oxidation of As. The difference between Ga and As can be explained in terms of the formation enthalpy for the oxide and the excess supply of oxygen. In an AlGaAs target the Al is very quickly completely oxidized irrespective of the experimental conditions. The steady state composition of the altered layers show in all cases a preferential removal of As.
publishDate 1992
dc.date.none.fl_str_mv 1992
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/25043
url https://hdl.handle.net/2445/25043
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Reproducció del document publicat a: http://dx.doi.org/10.1116/1.577731
Journal of Vacuum Science Technology A-Vacuum Surfaces and Films, 1992, vol. 10, p. 2926-2930
http://dx.doi.org/10.1116/1.577731
dc.rights.none.fl_str_mv (c) American Institute of Physics, 1992
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) American Institute of Physics, 1992
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
reponame:Dipòsit Digital de la UB
instname:Universidad de Barcelona
instname_str Universidad de Barcelona
reponame_str Dipòsit Digital de la UB
collection Dipòsit Digital de la UB
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869402748091367424
score 15,300724

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