Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices

High optical power density of 0.5 mW/cm2, external quantum efficiency of 0.1%, and population inversion of 7% are reported from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices. Electrical and electroluminescence mechanisms in these devices were investigated. The excitation cr...

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Autores: Berencén Ramírez, Yonder Antonio, Wutzler, R., Rebohle, L., Hiller, Daniel, Ramírez Ramírez, Joan Manel, Rodríguez, J. A., Skorupa, Wolfgang, Garrido Fernández, Blas
Formato: artículo
Estado:Versión publicada
Fecha de publicación:2013
País:España
Recursos:Universidad de Barcelona
Repositorio:Dipòsit Digital de la UB
OAI Identifier:oai:diposit.ub.edu:2445/46883
Acesso em linha:https://hdl.handle.net/2445/46883
Access Level:acceso abierto
Palavra-chave:Díodes
Òptica
Fotònica
Nanotecnologia
Ions
Terres rares
Sílice
Metall-òxid-semiconductors complementaris
Diodes
Optics
Photonics
Nanotechnology
Rare earths
Silica
Complementary metal oxide semiconductors
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oai_identifier_str oai:diposit.ub.edu:2445/46883
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network_name_str España
repository_id_str
spelling Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devicesBerencén Ramírez, Yonder AntonioWutzler, R.Rebohle, L.Hiller, DanielRamírez Ramírez, Joan ManelRodríguez, J. A.Skorupa, WolfgangGarrido Fernández, BlasDíodesÒpticaFotònicaNanotecnologiaIonsTerres raresSíliceMetall-òxid-semiconductors complementarisDiodesOpticsPhotonicsNanotechnologyIonsRare earthsSilicaComplementary metal oxide semiconductorsHigh optical power density of 0.5 mW/cm2, external quantum efficiency of 0.1%, and population inversion of 7% are reported from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices. Electrical and electroluminescence mechanisms in these devices were investigated. The excitation cross section for the 543 nm Tb3+ emission was estimated under electrical pumping, resulting in a value of 8.2 × 10−14 cm2, which is one order of magnitude larger than one reported for Tb3+:SiO2 light emitting devices. These results demonstrate the potentiality of Tb+-implanted silicon nitride material for the development of integrated light sources compatible with Si technology.American Institute of Physics2013info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttps://hdl.handle.net/2445/46883Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)reponame:Dipòsit Digital de la UBinstname:Universidad de BarcelonaInglésReproducció del document publicat a: http://dx.doi.org/10.1063/1.4820836Applied Physics Letters, 2013, vol. 103, num. 11, p. 111102-1-111102-4http://dx.doi.org/10.1063/1.4820836(c) American Institute of Physics , 2013info:eu-repo/semantics/openAccessoai:diposit.ub.edu:2445/468832026-05-27T06:46:51Z
dc.title.none.fl_str_mv Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices
title Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices
spellingShingle Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices
Berencén Ramírez, Yonder Antonio
Díodes
Òptica
Fotònica
Nanotecnologia
Ions
Terres rares
Sílice
Metall-òxid-semiconductors complementaris
Diodes
Optics
Photonics
Nanotechnology
Ions
Rare earths
Silica
Complementary metal oxide semiconductors
title_short Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices
title_full Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices
title_fullStr Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices
title_full_unstemmed Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices
title_sort Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices
dc.creator.none.fl_str_mv Berencén Ramírez, Yonder Antonio
Wutzler, R.
Rebohle, L.
Hiller, Daniel
Ramírez Ramírez, Joan Manel
Rodríguez, J. A.
Skorupa, Wolfgang
Garrido Fernández, Blas
author Berencén Ramírez, Yonder Antonio
author_facet Berencén Ramírez, Yonder Antonio
Wutzler, R.
Rebohle, L.
Hiller, Daniel
Ramírez Ramírez, Joan Manel
Rodríguez, J. A.
Skorupa, Wolfgang
Garrido Fernández, Blas
author_role author
author2 Wutzler, R.
Rebohle, L.
Hiller, Daniel
Ramírez Ramírez, Joan Manel
Rodríguez, J. A.
Skorupa, Wolfgang
Garrido Fernández, Blas
author2_role author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Díodes
Òptica
Fotònica
Nanotecnologia
Ions
Terres rares
Sílice
Metall-òxid-semiconductors complementaris
Diodes
Optics
Photonics
Nanotechnology
Ions
Rare earths
Silica
Complementary metal oxide semiconductors
topic Díodes
Òptica
Fotònica
Nanotecnologia
Ions
Terres rares
Sílice
Metall-òxid-semiconductors complementaris
Diodes
Optics
Photonics
Nanotechnology
Ions
Rare earths
Silica
Complementary metal oxide semiconductors
description High optical power density of 0.5 mW/cm2, external quantum efficiency of 0.1%, and population inversion of 7% are reported from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices. Electrical and electroluminescence mechanisms in these devices were investigated. The excitation cross section for the 543 nm Tb3+ emission was estimated under electrical pumping, resulting in a value of 8.2 × 10−14 cm2, which is one order of magnitude larger than one reported for Tb3+:SiO2 light emitting devices. These results demonstrate the potentiality of Tb+-implanted silicon nitride material for the development of integrated light sources compatible with Si technology.
publishDate 2013
dc.date.none.fl_str_mv 2013
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/46883
url https://hdl.handle.net/2445/46883
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Reproducció del document publicat a: http://dx.doi.org/10.1063/1.4820836
Applied Physics Letters, 2013, vol. 103, num. 11, p. 111102-1-111102-4
http://dx.doi.org/10.1063/1.4820836
dc.rights.none.fl_str_mv (c) American Institute of Physics , 2013
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) American Institute of Physics , 2013
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
reponame:Dipòsit Digital de la UB
instname:Universidad de Barcelona
instname_str Universidad de Barcelona
reponame_str Dipòsit Digital de la UB
collection Dipòsit Digital de la UB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,301603

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