Ni-Mn-Ga thin films produced by pulsed laser deposition

Polycrystalline Ni-Mn-Ga thin films have been deposited by the pulsed laser deposition (PLD) technique, using slices of a Ni-Mn-Ga single crystal as targets and onto Si (100) substrates at temperatures ranging from 673 K up to 973 K. Off-stoichiometry thin films were deposited at a base pressure of...

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Autores: Tello, P. G., Castaño, F. J., O'Handley, Robert C., 1942-, Allen, Samuel M., Esteve, M., Labarta, Amílcar, Batlle Gelabert, Xavier
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2002
País:España
Institución:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Repositorio:Recercat. Dipósit de la Recerca de Catalunya
OAI Identifier:oai:recercat.cat:2445/22088
Acceso en línea:https://hdl.handle.net/2445/22088
Access Level:acceso abierto
Palabra clave:Pel·lícules fines
Cristal·lografia
Ciència dels materials
Làsers
Microelectrònica
Crystallography
Materials science
Lasers
Microelectronics
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spelling Ni-Mn-Ga thin films produced by pulsed laser depositionTello, P. G.Castaño, F. J.O'Handley, Robert C., 1942-Allen, Samuel M.Esteve, M.Labarta, AmílcarBatlle Gelabert, XavierPel·lícules finesCristal·lografiaCiència dels materialsLàsersMicroelectrònicaCrystallographyMaterials scienceLasersMicroelectronicsPolycrystalline Ni-Mn-Ga thin films have been deposited by the pulsed laser deposition (PLD) technique, using slices of a Ni-Mn-Ga single crystal as targets and onto Si (100) substrates at temperatures ranging from 673 K up to 973 K. Off-stoichiometry thin films were deposited at a base pressure of 1×10-6-Torr or in a 5 mTorr Ar atmosphere. Samples deposited in vacuum and temperatures above 823 K are magnetic at room temperature and show the austenitic {220} reflection in their x-ray diffraction patterns. The temperature dependences of both electrical resistance and magnetic susceptibility suggest that these samples exhibit a structural martensitic transition at around 260 K. The magnetoresistance ratio at low temperature can be as high as 1.3%, suggesting the existence of a granular structure in the filmsAmerican Institute of Physics201220122002info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersion3 p.application/pdfhttps://hdl.handle.net/2445/22088Articles publicats en revistes (Física de la Matèria Condensada)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)InglésReproducció del document publicat a: http://dx.doi.org/10.1063/1.1452222Journal of Applied Physics, 2002, vol. 91, núm. 10, p. 8234-8236http://dx.doi.org/10.1063/1.1452222Thin films(c) American Institute of Physics, 2002info:eu-repo/semantics/openAccessoai:recercat.cat:2445/220882026-05-29T05:05:01Z
dc.title.none.fl_str_mv Ni-Mn-Ga thin films produced by pulsed laser deposition
title Ni-Mn-Ga thin films produced by pulsed laser deposition
spellingShingle Ni-Mn-Ga thin films produced by pulsed laser deposition
Tello, P. G.
Pel·lícules fines
Cristal·lografia
Ciència dels materials
Làsers
Microelectrònica
Crystallography
Materials science
Lasers
Microelectronics
title_short Ni-Mn-Ga thin films produced by pulsed laser deposition
title_full Ni-Mn-Ga thin films produced by pulsed laser deposition
title_fullStr Ni-Mn-Ga thin films produced by pulsed laser deposition
title_full_unstemmed Ni-Mn-Ga thin films produced by pulsed laser deposition
title_sort Ni-Mn-Ga thin films produced by pulsed laser deposition
dc.creator.none.fl_str_mv Tello, P. G.
Castaño, F. J.
O'Handley, Robert C., 1942-
Allen, Samuel M.
Esteve, M.
Labarta, Amílcar
Batlle Gelabert, Xavier
author Tello, P. G.
author_facet Tello, P. G.
Castaño, F. J.
O'Handley, Robert C., 1942-
Allen, Samuel M.
Esteve, M.
Labarta, Amílcar
Batlle Gelabert, Xavier
author_role author
author2 Castaño, F. J.
O'Handley, Robert C., 1942-
Allen, Samuel M.
Esteve, M.
Labarta, Amílcar
Batlle Gelabert, Xavier
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv Pel·lícules fines
Cristal·lografia
Ciència dels materials
Làsers
Microelectrònica
Crystallography
Materials science
Lasers
Microelectronics
topic Pel·lícules fines
Cristal·lografia
Ciència dels materials
Làsers
Microelectrònica
Crystallography
Materials science
Lasers
Microelectronics
description Polycrystalline Ni-Mn-Ga thin films have been deposited by the pulsed laser deposition (PLD) technique, using slices of a Ni-Mn-Ga single crystal as targets and onto Si (100) substrates at temperatures ranging from 673 K up to 973 K. Off-stoichiometry thin films were deposited at a base pressure of 1×10-6-Torr or in a 5 mTorr Ar atmosphere. Samples deposited in vacuum and temperatures above 823 K are magnetic at room temperature and show the austenitic {220} reflection in their x-ray diffraction patterns. The temperature dependences of both electrical resistance and magnetic susceptibility suggest that these samples exhibit a structural martensitic transition at around 260 K. The magnetoresistance ratio at low temperature can be as high as 1.3%, suggesting the existence of a granular structure in the films
publishDate 2002
dc.date.none.fl_str_mv 2002
2012
2012
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/22088
url https://hdl.handle.net/2445/22088
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Reproducció del document publicat a: http://dx.doi.org/10.1063/1.1452222
Journal of Applied Physics, 2002, vol. 91, núm. 10, p. 8234-8236
http://dx.doi.org/10.1063/1.1452222
dc.rights.none.fl_str_mv Thin films
(c) American Institute of Physics, 2002
info:eu-repo/semantics/openAccess
rights_invalid_str_mv Thin films
(c) American Institute of Physics, 2002
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 3 p.
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv Articles publicats en revistes (Física de la Matèria Condensada)
reponame:Recercat. Dipósit de la Recerca de Catalunya
instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
instname_str Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
reponame_str Recercat. Dipósit de la Recerca de Catalunya
collection Recercat. Dipósit de la Recerca de Catalunya
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.811543

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