Electronic structure of silicon-based nanostructures

We have developed a unifying tight-binding Hamiltonian that can account for the electronic properties of recently proposed Si-based nanostructures, namely, Si graphene-like sheets and Si nanotubes. We considered the sp3s∗ and sp3 models up to first- and second-nearest neighbors, respectively. Our re...

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Detalles Bibliográficos
Autores: Guzmán Verri, Gian Giacomo, Lew Yan Voon, Lok Chong
Tipo de recurso: artículo
Fecha de publicación:2007
País:Costa Rica
Institución:Universidad de Costa Rica
Repositorio:Kérwá
OAI Identifier:oai:kerwa.ucr.ac.cr:10669/27863
Acceso en línea:http://journals.aps.org/prb/abstract/10.1103/PhysRevB.76.075131
https://hdl.handle.net/10669/27863
Access Level:acceso abierto
Palabra clave:silicene
tight-binding
electronic properties
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dc.title.es_ES.fl_str_mv Electronic structure of silicon-based nanostructures
title Electronic structure of silicon-based nanostructures
spellingShingle Electronic structure of silicon-based nanostructures
Guzmán Verri, Gian Giacomo
silicene
tight-binding
electronic properties
title_short Electronic structure of silicon-based nanostructures
title_full Electronic structure of silicon-based nanostructures
title_fullStr Electronic structure of silicon-based nanostructures
title_full_unstemmed Electronic structure of silicon-based nanostructures
title_sort Electronic structure of silicon-based nanostructures
dc.creator.none.fl_str_mv Guzmán Verri, Gian Giacomo
Lew Yan Voon, Lok Chong
author Guzmán Verri, Gian Giacomo
author_facet Guzmán Verri, Gian Giacomo
Lew Yan Voon, Lok Chong
author_role author
author2 Lew Yan Voon, Lok Chong
author2_role author
dc.subject.es_ES.fl_str_mv silicene
tight-binding
electronic properties
topic silicene
tight-binding
electronic properties
description We have developed a unifying tight-binding Hamiltonian that can account for the electronic properties of recently proposed Si-based nanostructures, namely, Si graphene-like sheets and Si nanotubes. We considered the sp3s∗ and sp3 models up to first- and second-nearest neighbors, respectively. Our results show that the Si graphene-like sheets considered here are metals or zero-gap semiconductors, and that the corresponding Si nanotubes follow the so-called Hamada’s [Phys. Rev. Lett. 68, 1579 (1992)] rule. Comparison to a recent ab initio calculation is made.
publishDate 2007
dc.date.issued.none.fl_str_mv 2007-08-30
dc.date.accessioned.none.fl_str_mv 2016-05-27T21:33:52Z
dc.date.available.none.fl_str_mv 2016-05-27T21:33:52Z
dc.type.none.fl_str_mv artículo original
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dc.identifier.citation.none.fl_str_mv http://journals.aps.org/prb/abstract/10.1103/PhysRevB.76.075131
dc.identifier.issn.none.fl_str_mv 2469-9969
2469-9950
dc.identifier.uri.none.fl_str_mv https://hdl.handle.net/10669/27863
dc.identifier.doi.es_ES.fl_str_mv doi.org/10.1103/PhysRevB.76.075131
url http://journals.aps.org/prb/abstract/10.1103/PhysRevB.76.075131
https://hdl.handle.net/10669/27863
identifier_str_mv 2469-9969
2469-9950
doi.org/10.1103/PhysRevB.76.075131
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dc.source.es_ES.fl_str_mv Physical Review B 76, 075131 (2007)
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spelling Guzmán Verri, Gian Giacomofd5b9d42-3d5b-4995-a5db-91d33c0ca622600Lew Yan Voon, Lok Chongbf4489a3-5b9a-4af2-95a3-cad6cc8a180d6002016-05-27T21:33:52Z2016-05-27T21:33:52Z2007-08-30http://journals.aps.org/prb/abstract/10.1103/PhysRevB.76.0751312469-99692469-9950https://hdl.handle.net/10669/27863doi.org/10.1103/PhysRevB.76.075131We have developed a unifying tight-binding Hamiltonian that can account for the electronic properties of recently proposed Si-based nanostructures, namely, Si graphene-like sheets and Si nanotubes. We considered the sp3s∗ and sp3 models up to first- and second-nearest neighbors, respectively. Our results show that the Si graphene-like sheets considered here are metals or zero-gap semiconductors, and that the corresponding Si nanotubes follow the so-called Hamada’s [Phys. Rev. Lett. 68, 1579 (1992)] rule. 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