The effect of magnetic field on the impurity binding energy of shallow donor impurities in a Ga1−xInxNyAs1−y/GaAs quantum well
ABSTRACT: Using a variational approach, we have investigated the effects of the magnetic field, the impurity position, and the nitrogen and indium concentrations on impurity binding energy in a Ga1−xInxNyAs1−y/GaAs quantum well. Our calculations have revealed the dependence of impurity binding on th...
| Autores: | , , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión enviada para evaluación y publicación |
| Fecha de publicación: | 2012 |
| País: | Colombia |
| Institución: | Universidad de Antioquia |
| Repositorio: | Repositorio UdeA |
| Idioma: | inglés |
| OAI Identifier: | oai:bibliotecadigital.udea.edu.co:10495/8630 |
| Acceso en línea: | http://hdl.handle.net/10495/8630 |
| Access Level: | acceso abierto |
| Palabra clave: | Impurezas Pozo de Quantum Nitruro |
| Sumario: | ABSTRACT: Using a variational approach, we have investigated the effects of the magnetic field, the impurity position, and the nitrogen and indium concentrations on impurity binding energy in a Ga1−xInxNyAs1−y/GaAs quantum well. Our calculations have revealed the dependence of impurity binding on the applied magnetic field, the impurity position, and the nitrogen and indium concentrations. |
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