Electrical isolation of InGaP by proton and helium ion irradiation
Formation of electrical isolation in n- and p-type In0.49Ga0.51P epitaxial layers grown on semi-insulating GaAs substrates was investigated using proton or helium ion irradiation. Sheet resistance increases with the irradiation dose, reaching a saturation level of ≈109 Ω/. The results show that the...
| Autores: | , , , , |
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| Tipo de documento: | artigo |
| Estado: | Versão publicada |
| Data de publicação: | 2002 |
| País: | Brasil |
| Recursos: | Universidade Federal do Rio Grande do Sul (UFRGS) |
| Repositório: | Repositório Institucional da UFRGS |
| Idioma: | inglês |
| OAI Identifier: | oai:www.lume.ufrgs.br:10183/95822 |
| Acesso em linha: | http://hdl.handle.net/10183/95822 |
| Access Level: | Acceso aberto |
| Palavra-chave: | Densidade de portadores Compostos de galio Semicondutores iii-v Compostos de indio Efeitos de feixe iônico Camadas epitaxiais semicondutoras Estabilidade térmica |
| Resumo: | Formation of electrical isolation in n- and p-type In0.49Ga0.51P epitaxial layers grown on semi-insulating GaAs substrates was investigated using proton or helium ion irradiation. Sheet resistance increases with the irradiation dose, reaching a saturation level of ≈109 Ω/. The results show that the threshold dose necessary for complete isolation linearly depends on the original carrier concentration either in p- or n-type doped InGaP layers. Thermal stability of the isolation during postirradiation annealing was found to increase with accumulation of the ion dose. The maximum temperature at which the isolation persists is ~=500°C. |
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