Stabilization of higher-k tetragonal HfO/sub 2/ by SiO/sub 2/ admixture enabling thermally stable metal-insulator-metal capacitors
The authors report the relationship between HfO2 crystalline phase and the resulting electrical properties. Crystallization of amorphous HfO2 into the monoclinic phase led to a significant increase in leakage current and formation of local defects. Admixture of 10% SiO2 avoided formation of these de...
| Autores: | , , , , , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2007 |
| País: | Brasil |
| Institución: | Universidade Federal do Rio Grande do Sul (UFRGS) |
| Repositorio: | Repositório Institucional da UFRGS |
| Idioma: | inglés |
| OAI Identifier: | oai:www.lume.ufrgs.br:10183/141733 |
| Acceso en línea: | http://hdl.handle.net/10183/141733 |
| Access Level: | acceso abierto |
| Palabra clave: | Propriedades dielétricas Capacitores Háfnio |
| Sumario: | The authors report the relationship between HfO2 crystalline phase and the resulting electrical properties. Crystallization of amorphous HfO2 into the monoclinic phase led to a significant increase in leakage current and formation of local defects. Admixture of 10% SiO2 avoided formation of these defects by stabilization of the tetragonal phase, and concurrently increased the permittivity to 35. This understanding enabled fabrication of crystalline HfO2 based metal-insulator-metal capacitors able to withstand a thermal budget of 1000 °C while optimizing capacitance equivalent thickness 1.3 nm at low leakage J 1 V 10−7 A/cm2 . |
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