Electroluminescence induced by Ge nanocrystals obtained by hot ion implantation into SiO2
Commonly, electroluminescence (EL) from Ge nanocrystals (Ge NCs) has been obtained by room temperature (RT) Ge implantation into a SiO2 matrix followed by a high temperature anneal. In the present work, we have used a novel experimental approach: we have performed the Ge implantation at high tempera...
| Autores: | , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2009 |
| País: | Brasil |
| Institución: | Universidade Federal do Rio Grande do Sul (UFRGS) |
| Repositorio: | Repositório Institucional da UFRGS |
| Idioma: | inglés |
| OAI Identifier: | oai:www.lume.ufrgs.br:10183/96129 |
| Acceso en línea: | http://hdl.handle.net/10183/96129 |
| Access Level: | acceso abierto |
| Palabra clave: | Materiais nanoestruturados Eletroluminescência Semicondutores elementares Implantacao ionica Dispositivos mis Deslocamento de linha espectral Compostos de silício Germânio |
| Sumario: | Commonly, electroluminescence (EL) from Ge nanocrystals (Ge NCs) has been obtained by room temperature (RT) Ge implantation into a SiO2 matrix followed by a high temperature anneal. In the present work, we have used a novel experimental approach: we have performed the Ge implantation at high temperature (Ti) and subsequently a high temperature anneal at 900 °C in order to grow the Ge NCs. By performing the implantation at Ti=350 °C, the electrical stability of the MOSLEDs were enhanced, as compared to the ones obtained from RT implantation. Moreover, by changing the implantation fluence from Φ=0.5x1016 and 1.0x1016 Ge/cm² we have observed a blueshift in the EL emission peak. The results show that the electrical stability of the hot implanted devices is higher than the ones obtained by RT implantation. |
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